LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Anode LBAW56LT1 • Pb−Free Package is Available. 1 CATHODE 3 ANODE 3 2 CATHODE 1 2 SOT– 23 (TO–236AB) MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF I FM(surge) Value 70 200 500 Unit Vdc mAdc mAdc Symbol PD Max 225 Unit mW R θJA PD 1.8 556 300 mW /°C °C/W mW ORDERING INFORMATION THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (1) T A = 25 °C erate above 25 °C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25 °C Derate above 25 °C Thermal Resistance, Junction to Ambient Junction and Storage Temperature R θJA T J , T stg Device PACKAGE Shipping LBAW56LT1 SOT-23 3000 Tape & Reel LBAW56LT1G SOT-23 3000 Tape & Reel 2.4 mW /°C 417 °C/W -55 to +150 °C DEVICE MARKING LBAW56LT1 = A1 ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit V (BR) 70 – Vdc – – – – 30 2.5 50 2.0 – – – – – 715 855 1000 1250 6.0 OFF CHARACTERISTICS Reverse Breakdown Voltage (I (BR) = 100 µAdc) Reverse Voltage Leakage Current (V R = 25 Vdc, T J = 150 °C) (V R = 70 Vdc) (V R = 70 Vdc, T J = 150 °C) Diode Capacitance (V R = 0, f = 1.0 MHz) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 50 mAdc) (I F = 150 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc) (Figure 1) R L = 100Ω 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. IR µAdc C D V F t rr pF mVdc ns LBAW56LT1-1/3 LESHAN RADIO COMPANY, LTD. LBAW56LT1 820 Ω +10 V 2k 0.1 µF 100 µH tr IF 0.1 µF tp IF t trr 10% t DUT 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% iR(REC) = 1.0 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1.0 mA) INPUT SIGNAL Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit CURVES APPLICABLE TO EACH CATHODE 100 10 I R , REVERSE CURRENT (µA) T A = 85°C 10 T A = – 40°C 1.0 T A = 25°C 0.1 T A = 125°C 1.0 T A = 85°C 0.1 T A = 55°C 0.01 T A = 25°C 0.001 0.2 0.4 0.6 0.8 1.0 0 1.2 10 20 30 40 50 V R , REVERSE VOLTAGE (VOLTS) V F , FORWARD VOLTAGE (VOLTS) Figure 3. Leakage Current Figure 2. Forward Voltage 1.75 C D ,DIODE CAPACITANCE (pF) I F , FORWARD CURRENT (mA) T A = 150°C 1.5 1.25 1.0 0.75 0 2 4 6 8 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance LBAW56LT1-2/3 LESHAN RADIO COMPANY, LTD. LBAW56LT1 SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm LBAW56LT1-3/3