LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC123TLT1G Applications Inverter, Interface, Driver 3 • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • 1 2 SOT–23 We declare that the material of product compliance with RoHS requirements. 1 BASE zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits 50 50 5 100 200 150 −55 to +150 Unit V V V mA mW °C °C 3 COLLECTOR R1 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTC123TLT1G N19 2.2 - 3000/Tape & Reel LDTC123TLT1G N19 2.2 - 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency ∗ Characteristics of built-in transistor. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT ∗ Min. 50 50 5 − − − 100 1.54 − Typ. Max. − − − − − − 250 2.2 250 − − − 0.5 0.5 0.3 600 2.86 − Unit V V V µA µA V − kΩ MHz Conditions IC=50µA IC=1mA IE=50µA VCB=50V VEB=4V IC/IB=5mA/0.25mA IC=1mA , VCE=5V − VCB=10V , IE= −5mA , f=100MHz 1/3 LESHAN RADIO COMPANY, LTD. LDTC123TLT1G zElectrical characteristic curves 1k VCE=5V 200 100 Ta=100°C 25°C −40°C 50 20 10 5 2 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.1 DC Current gain vs. Collector Current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DC CURRENT GAIN : hFE 500 1 IC/IB=10 500m Ta=100°C 25°C −40°C 200m 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. Collector Current 2/3 LESHAN RADIO COMPANY, LTD. LDTC123TLT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 A B C D G H J G C D MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0034 0.0140 0.0350 0.0830 0.0177 0.0070 0.0285 0.0401 0.1039 0.0236 DIM B S H K J K L S V MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm 3/3