LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA143TET1G Applications Inverter, Interface, Driver • 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • 1 2 SC-89 We declare that the material of product compliance with RoHS requirements. 1 BASE Symbol 3 COLLECTOR 2 EMITTER zAbsolute maximum ratings (Ta=25°C) Parameter R1 Unit Limits Collector-base voltage VCBO − 50 V Collector-emitter voltage VCEO − 50 V Emitter-base voltage VEBO −5 V Collector current IC −100 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg °C −55 to +150 DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTA143TET1G O4 4.7 - 3000/Tape & Reel LDTA143TET3G O4 4.7 - 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO −50 − − V IC=−50µA Collector-emitter breakdown voltage BVCEO −50 − − V IC=−1mA Emitter-base breakdown voltage BVEBO −5 − − V IE=−50µA ICBO − − −0.5 µA VCB=−50V VEB=−4V Collector cutoff current Conditions IEBO − − −0.5 µA VCE(sat) − − −0.3 V IC/IB=−5mA/−0.25mA DC current transfer ratio hFE 100 250 600 − IC=−1mA, VCE=−5V Input resistance R1 3.29 4.7 6.11 kΩ Transition frequency fT ∗ − 250 − MHz Emitter cutoff current Collector-emitter saturation voltage − VCE=−10V, IE=5mA, f=100MHz ∗ Characteristics of built-in transistor 1/3 LESHAN RADIO COMPANY, LTD. LDTA143TET1G zElectrical characteristic curves DC CURRENT GAIN : hFE 500 200 100 50 Ta=100°C 25°C −40°C 20 10 5 2 1 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current −1 COLLECTOR SATURATION VOLTAGE : VCE(sat) VCE=−5V −500m −200m lC/lB=20 Ta=100°C 25°C −40°C −100m −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. collector current 2/3 LESHAN RADIO COMPANY, LTD. LDTA143TET1G SC-89 NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02. 3/3