LESHAN RADIO COMPANY, LTD. Amplifier Transistors NPN Silicon LMBT6428LT1G LMBT6429LT1G z We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping LMBT6428LT1G 1KM 3000/Tape & Reel LMBT6428LT3G LMBT6429LT1G 1KM 1L 10000/Tape & Reel LMBT6429LT3G 1L 3 3000/Tape & Reel 10000/Tape & Reel 1 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) MAXIMUM RATINGS Rating Symbol Value 6428LT1 6429LT1 Unit Collector–Emitter Voltage V CEO 50 45 Vdc Collector–Base Voltage V CBO 60 55 Vdc Emitter–Base Voltage V Collector Current — Continuous EBO IC 6.0 Vdc 200 mAdc 3 COLLECTOR 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.8 mW/°C RθJA 556 °C/W PD 300 mW 2.4 mW/°C 417 –55 to +150 °C/W °C RθJA TJ , Tstg DEVICE MARKING LMBT6428LT1G = 1KM, LMBT6429LT1G = 1L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(3) V (BR)CEO Vdc (I C = 1.0 mAdc, I B = 0) LMBT6428LT1G 50 — (I C = 1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage LMBT6429LT1G 45 — (I C = 0.1mAdc, I E = 0) LMBT6428LT1G 60 — (I C = 0.1mAdc, I E = 0) LMBT6429LT1G 55 — — 0.1 — 0.01 — 0.01 V (BR)CBO Collector Cutoff Current ( V EB = 5.0Vdc, I C= 0) µAdc I CBO ( V CB = 30Vdc, I E = 0 ) Emitter Cutoff Current µAdc I CBO ( V CE = 30Vdc, ) Collector Cutoff Current Vdc I EBO µAdc 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 1/5 LESHAN RADIO COMPANY, LTD. LMBT6428LT1G LMBT6429LT1G ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit LMBT6428LT1G LMBT6429LT1G 250 500 — — (I C = 0.1 mAdc, V CE = 5.0 Vdc) LMBT6428LT1G LMBT6429LT1G 250 500 650 1250 (I C = 1.0 mAdc, V CE = 5.0 Vdc) LMBT6428LT1G LMBT6429LT1G 250 500 — — (I C = 10 mAdc, V CE = 5.0 Vdc) LMBT6428LT1G LMBT6429LT1G 250 500 — — –– –– 0.2 0.6 V BE(on) 0.56 0.66 Vdc fT 100 700 MHz C obo –– 3.0 pF C ibo –– 8.0 pF ON CHARACTERISTICS DC Current Gain (I C = 0.01 mAdc, V CE = 5.0 Vdc) hFE Collector–Emitter Saturation Voltage (I C = 10 mAdc, I B = 0.5 mAdc) (I C = 100 mAdc, I B = 0.5 mAdc) Base–Emitter On Voltage (I C = 1.0 mAdc, V CE = 5.0mAdc) –– VCE(sat) Vdc SMALL–SIGNAL CHARACTERISTICS Current Gain–Bandwidth Product (V CE = 5.0 Vdc, I C = 1.0mAdc, f = 100 MHz) Output Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB= 0.5 Vdc, I C = 0 , f = 1.0 MHz) RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model 2/5 LESHAN RADIO COMPANY, LTD. LMBT6428LT1G LMBT6429LT1G NOISE CHARACTERISTICS (V CE = 5.0 Vdc, T A = 25°C) NOISE VOLTAGE 30 30 20 I C = 10 mA BANDWIDTH = 1.0 Hz e n , NOISE VOLTAGE (nV) e n , NOISE VOLTAGE (nV) BANDWIDTH = 1.0 Hz R S~ ~0 3.0 mA 10 1.0 mA 7.0 5.0 300 µA 20 50 100 200 500 1k 2k 5k 10k 20k 100 Hz 7.0 10 kHz 1.0 kHz 5.0 3.0 0.01 0.02 50k 100k 0.05 0.1 0.2 0.5 1.0 2.0 5.0 f, FREQUENCY (Hz) I C , COLLECTOR CURRENT (mA) Figure 3. Effects of Collector Current 10 2.0 10 BANDWIDTH = 1.0 Hz 5.0 I C = 10 mA 3.0 NF, NOISE FIGURE (dB) I n , NOISE CURRENT (pA) f = 10 Hz 10 Figure 2. Effects of Frequency 7.0 3.0 mA 2.0 1.0 mA 1.0 0.7 0.5 300 µA 0.3 100 µA 0.2 0.1 RS~ ~ 0 100 kHz 3.0 10 20 RS~ ~ 0 10 20 BANDWIDTH = 10 Hz to 15.7 kHz 12 I C = 1.0 mA 500 µA 8.0 100 µA 10 µA 4.0 30 µA 10 µA 50 100 200 16 500 1k 2k 5k 10k 20k 0 10 50k 100k 20 50 100 200 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) R S , SOURCE RESISTANCE (Ω) Figure 4. Noise Current Figure 5. Wideband Noise Figure 50k 100k 100 Hz NOISE DATA 20 200 BANDWIDTH = 1.0 Hz I C = 10 mA 100 3.0 mA 70 50 1.0 mA 300 µA 30 100 µA 20 30 µA 10 10 µA 7.0 5.0 NF, NOISE FIGURE (dB) V T , TOTAL NOISE VOLTAGE (nV) 300 16 3.0 mA I C = 10 mA 1.0 mA 12 300 µA 8.0 100 µA 30 µA 4.0 10 µA BANDWIDTH = 1.0 Hz 3.0 0 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 10 20 50 100 200 500 1k 2k 5k 10k 20k R S , SOURCE RESISTANCE (Ω) R S , SOURCE RESISTANCE (Ω) Figure 6. Total Noise Voltage Figure 7. Noise Figure 50k 100k 3/5 LESHAN RADIO COMPANY, LTD. h FE, DC CURRENT GAIN (NORMALIZED) LMBT6428LT1G LMBT6429LT1G 4.0 3.0 V CE = 5.0 V 2.0 T A = 125°C 25°C 1.0 –55°C 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 I C , COLLECTOR CURRENT (mA) 1.0 T J = 25°C V, VOLTAGE (VOLTS) 0.8 0.6 V BE @ V CE = 5.0 V 0.4 0.2 V CE(sat) @ I C /I B = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 R θVBE , BASE– EMITTER TEMPERATURE COEFFICIENT (mV/ °C) Figure 8. DC Current Gain –0.4 –0.8 –1.2 T J = 25°C to 125°C –1.6 –2.0 –55°C to 25°C –2.4 0.01 0.02 0.05 I C , COLLECTOR CURRENT (mA) f T , CURRENT– GAIN — BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF) T J = 25°C C ob C ib C eb 3.0 C cb 2.0 1.0 0.8 0.1 0.2 0.5 1.0 2.0 5.0 10 20 1.0 2.0 5.0 10 20 50 100 Figure 10. Temperature Coefficients 8.0 4.0 0.5 I C , COLLECTOR CURRENT (mA) Figure 9. “On” Voltages 6.0 0.1 0.2 50 100 50 300 200 100 V CE = 5.0 V 70 T J = 25°C 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current–Gain — Bandwidth Product 4/5 LESHAN RADIO COMPANY, LTD. LMBT6428LT1G LMBT6429LT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 A B C D G H J G C D MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0034 0.0140 0.0350 0.0830 0.0177 0.0070 0.0285 0.0401 0.1039 0.0236 DIM B S H K J K L S V MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm 5/5