LESHAN RADIO COMPANY, LTD. Darlington Amplifier Transistors z We declare that the material of product compliance with RoHS requirements. LMBTA13LT1G LMBTA14LT1G ORDERING INFORMATION Device Marking Shipping LMBTA13LT1G 1M LMBTA14LT1G LMBTA13LT3G 1N 3000/Tape & Reel 3000/Tape & Reel 1M LMBTA14LT3G 1N 10000/Tape & Reel 10000/Tape & Reel 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CES 30 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 10 Vdc IC 300 mAdc Collector Current — Continuous SOT–23 COLLECTOR 3 1 BASE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.8 mW/°C R θJA 556 °C/W PD 300 mW 2.4 mW/°C 417 –55 to +150 °C/W °C R θJA T J , T stg 2 EMITTER DEVICE MARKING LMBTA13LT1G = 1M; LMBTA14 LT1G = 1N; ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit V (BR)CEO 30 — Vdc I CBO — 100 nAdc I EBO — 100 nAdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 100 µAdc, V BE = 0) Collector Cutoff Current ( V CB = 30Vdc, I E = 0) Emitter Cutoff Current ( V EB = 10Vdc, I C = 0) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Rev.O 1/6 LESHAN RADIO COMPANY, LTD. LMBTA13LT1G LMBTA14LT1G ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS (3) DC Current Gain (I C = 10 mAdc, V CE = 5.0 Vdc) hFE LMBTA13 LMBTA14 LMBTA13 LMBTA14 (I C = 100mAdc, V CE = 5.0Vdc) Collector–Emitter Saturation Voltage (I C = 100 mAdc, I B = 0.1 mAdc) Base–Emitter On Voltage (I C = 100mAdc, V CE = 5.0Vdc) –– 5,000 10,000 10,000 20,000 — — — — VCE(sat) –– 1.5 Vdc V BE — 2.0 Vdc SMALL–SIGNAL CHARACTERISTICS Current – Gain–Bandwidth Product(4) (V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz) fT 125 — MHz 3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%. 4. f T = |h f e | *f test . RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model Rev.O 2/6 LESHAN RADIO COMPANY, LTD. LMBTA13LT1G LMBTA14LT1G NOISE CHARACTERISTICS (V CE = 5.0 Vdc, T A = 25°C) 2.0 500 BANDWIDTH = 1.0 Hz 1.0 0.7 S 200 I n , NOISE CURRENT (pA) e n , NOISE VOLTAGE (nV) BANDWIDTH = 1.0 Hz R ~ ~0 100 10 µA 50 100µA 20 IC=1.0mA 10 0.5 IC=1.0mA 0.3 0.2 100µA 0.1 0.07 0.05 10µA 0.03 5.0 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k 0.02 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 2. Noise Voltage Figure 3. Noise Current 200 50k 100k 500 BANDWIDTH = 10 Hz TO 15.7 kHz NF, NOISE FIGURE (dB) V T, TOTAL WIDEBAND NOISE VOLTAGE (nV) 10 BANDWIDTH = 10 Hz TO 15.7 kHz 100 I C = 10 µA 70 50 100 µA 30 20 1.0 mA 2.0 10 µA 100 50 100 µA 20 I C = 1.0 mA 10 10 1.0 200 5.0 10 20 50 100 200 500 1.0k 5.0 1.0 2.0 5.0 10 20 50 100 200 R S , SOURCE RESISTANCE (kΩ) R S , SOURCE RESISTANCE (kΩ) Figure 4. Total Wideband Noise Voltage Figure 5. Wideband Noise Figure 500 1.0k Rev.O 3/6 LESHAN RADIO COMPANY, LTD. LMBTA13LT1G LMBTA14LT1G SMALL–SIGNAL CHARACTERISTICS 7.0 C ibo C obo 5.0 3.0 2.0 0.1 0.2 0.4 1.0 1.2 4.0 10 20 40 h FE , DC CURRENT GAIN 70k 25°C 30k 20k 10k –55°C V CE= 5.0V 3.0k 2.0k 5.0 7.0 10 20 30 50 70 100 200 300 500 V, VOLTAGE ( VOLTS ) 0.4 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 T J= 25°C 2.5 I C = 10mA 50 mA 250mA 500mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 I B , BASE CURRENT (µA) V BE(sat) @ I C /I B = 1000 1.2 V BE(on) @ V CE = 5.0 V 1.0 V CE(sat) @ I C /I B = 1000 0.6 10 20 30 50 70 100 200 300 C , COLLECTOR CURRENT (mA) Figure 17. “ON” Voltages 500 500 3.0 Figure 9. Collector Saturation Region 1.4 7.0 0.6 Figure 8. DC Current Gain T J = 25°C 5.0 0.8 I C , COLLECTOR CURRENT (mA) 1.6 0.8 1.0 I C , COLLECTOR CURRENT (mA) 100k 5.0k T J = 25°C Figure 7. High Frequency Current Gain T J= 125°C 7.0k 2.0 Figure 6. Capacitance 200k 50k V CE = 5.0 V f = 100 MHz V R, REVERSE VOLTAGE (VOLTS) V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) 0.04 |h fe |, SMALL– SIGNAL CURRENT GAIN T J =25°C 10 4.0 R θV , TEMPERATURE COEFFICIENTS (mV/°C) C, CAPACITANCE (pF) 20 –1.0 *APPLIES FOR I C /I B <h FE /3.0 –2.0 +25°C TO +125°C * R θVC for V CE(sat) –55°C TO +25°C –3.0 +25°C TO +125°C –4.0 θ VB for V BE –5.0 –55°C TO +25°C –6.0 5.0 7.0 10 20 30 50 70 100 200 300 I C , COLLECTOR CURRENT (mA) Figure 18. Temperature Coefficients Rev.O 4/6 500 LESHAN RADIO COMPANY, LTD. r( t) TRANSIENT THERMAL RESISTANCE(NORMALIZED) LMBTA13LT1G 1.0 0.7 0.5 LMBTA14LT1G D = 0.5 0.2 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 SINGLE PULSE 0.07 0.05 0.03 Z θJC(t) = r(t) • R θJC T J(pk) – T C = P (pk) Z 0.02 Z θJA(t) = r(t) • R θJA T J(pk) – T A = P (pk) Z θJA(t) θJC(t) 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k t, TIME (ms) Figure 12. Thermal Response I C , COLLECTOR CURRENT (mA) 1.0k 1.0 ms 700 FIGURE A 500 300 T C = 25°C T A = 25°C 200 tP 100µs PP 1.0 s P P 100 70 50 t 30 CURRENT LIMIT 20 THERMAL LIMIT SECOND BREAKDOWN LIMIT 1 1/f DUTY CYCLE =t 1 f = 10 0.4 0.6 1.0 2.0 4.0 6.0 10 20 40 t1 tP PEAK PULSE POWER = P P V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 13.Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data Rev.O 5/6 LESHAN RADIO COMPANY, LTD. LMBTA13LT1G LMBTA14LT1G SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 6/6