LSF811C1 Infrared Emitting Diode ② Cathode ① Anode Dimensions (Unit:mm) ･High-output Power ･Compact ･High Reliability APPLICATIONS ･Optical Switches ･Optical Sensors ･Medical Application FEATURES SPECTRAL OUTPUT 120 To purchase this part contact Marktech Optoelectronics at 800.984.5337 100 UNIT mA A V mW ℃ ℃ ℃ ℃ RELATIVE POWER OUTPUT(%) 1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) ITEM SYMBOL RATINGS 60 Forward Current (DC) IF 0.5 Forward Current (Pulse)*1 IFP 5 Reverse Voltage VR 120 Power Dissipation PD Topr Operating Temp. -20 TO 85 Tstg Storage Temp. -30 TO 100 100 Junction Temp. Tj Lead Soldering Temp.*2 260 Tls *1:Tw=10uS,T=10mS *2:Time 5 Sec max,Position:Up to 3mm from the body 80 60 40 20 0 710 Marktech Optoelectronics www.marktechopto.com 810 WAVELENGTH(nm) 910 LSF811C1 Infrared Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃) CONDITIONS ITEM SYMBOL IF=20mA Power Output PO IF=20mA Forward Voltage VF VR=5V Reverse Current IR Peak Wavelength λp IF=20mA Spectral Line Half Width Δλ IF=20mA IF=20mA Half Intensity Beam Angle θ IFP=50mA Rise Time Tr Fall Time IFP=50mA Tf Junction Capacitance 1MHz ,V=0V Cj Temp. Coefficient of PO IF=10mA P/T IF=10mA Temp. Coefficient of VF V/T 60 50 40 30 20 10 RADIATION PATTERN 1 2 350 300 250 200 150 100 50 0 3 0 FORWARD VOLTAGE(V) RELATIVE POWER OUTPUT(%) 70 60 50 40 30 20 10 30 60 60 80 80 60 40 20 0 -90 90 AMBIENT TEMPERATURE(℃) 140 1.6 120 1.5 100 80 60 40 20 0 -30 0 30 60 -60 -30 0 30 60 90 BEAM ANGLE(deg.) POWER OUTPUT vs TEMPERATURE IF=10mA 80 0 40 100 FORWARD CURRENT(mA) THERMAL DERATING CURVE 0 -30 20 FORWARD VOLTAGE(V) 0 UNIT mW 1.9 V 100 μA nm nm deg. nS nS pF %/℃ mV/℃ 120 RELATIVE POWER OUTPUT(%) RELATIVE POWER OUTPUT(%) FORWARD CURRENT(mA) 70 MAX 810 30 ±25 − − 60 -0.6 -2.0 400 0 FORWARD CURRENT(mA) TYP 6.5 1.4 RELATIVE POWER vs FORWARD CURRENT FORWARD I-V CHARACTERISTICS 80 910 MIN 90 AMBIENT TEMPERATURE(℃) FORWARD VOLTAGE vs TEMPERATURE IF=10mA 1.4 1.3 1.2 1.1 1 -30 0 30 60 90 AMBIENT TEMPERATURE(℃)