VS665N Visible Light Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃) CONDITIONS ITEM SYMBOL IF=20mA Power Output PO IF=20mA Forward Voltage VF VR=5V Reverse Current IR Peak Wavelength λp IF=20mA Spectral Line Half Width Δλ IF=20mA IF=20mA Half Intensity Beam Angle θ IFP=20mA Rise Time Tr IFP=20mA Fall Time Tf 1MHz ,V=0V Junction Capacitance Cj IF=10mA Temp. Coefficient of PO P/T Temp. Coefficient of VF IF=10mA V/T FEATURES 50 40 30 20 10 0 SPECTRAL OUTPUT 1 OPTRANS 100 3 0 10 20 30 40 50 100 80 60 40 20 0 -90 60 FORWARD CURRENT(mA) 40 20 0 610 660 710 WAVELENGTH(nm) To purchase this part contact Marktech Optoelectronics at 800.984.5337 50 40 30 20 10 0 -30 0 30 60 90 AMBIENT TEMPERATURE(℃) 140 3 120 2.5 FORWARD VOLTAGE(V) 60 RELATIVE POWER OUTPUT(%) 60 FORWARD CURRENT(mA) RELATIVE POWER OUTPUT(%) 80 100 80 60 40 20 0 -30 0 30 60 -30 0 30 60 90 FORWARD VOLTAGE vs TEMPERATURE IF=10mA POWER OUTPUT vs TEMPERATURE IF=10mA THERMAL DERATING CURVE -60 BEAM ANGLE(deg.) 100 UNIT mA A V mW ℃ ℃ ℃ ℃ 2.2 100 RADIATION PATTERN 200 FORWARD VOLTAGE(V) 120 1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) RATINGS ITEM SYMBOL 50 Forward Current (DC) IF 0.5 Forward Current (Pulse)*1 IFP Reverse Voltage 5 VR 110 Power Dissipation PD Topr Operating Temp. -20 TO 85 Tstg Storage Temp. -30 TO 100 Junction Temp. 100 Tj Lead Soldering Temp.*2 260 Tls *1:Tw=10uS,T=10mS *2:Time 5 Sec max,Position:Up to 3mm from the body 2 UNIT mW V μA nm nm deg. nS nS pF %/℃ mV/℃ 120 0 0 MAX 660 25 ±6 30 30 20 -0.5 -1.5 RELATIVE POWER OUTPUT(%) ･High-output Power ･Narrow Beam Angle ･High Reliability APPLICATIONS ･Color Sensor (Money-bill) ･Paper Sensor (Money-bill) ･Bar-code Reader 300 RELATIVE POWER OUTPUT(%) ② Cathode FORWARD CURRENT(mA) ① Anode TYP 3.0 1.8 RELATIVE POWER vs FORWARD CURRENT FORWARD I-V CHARACTERISTICS 60 MIN 1.5 90 AMBIENT TEMPERATURE(℃) 2 1.5 1 0.5 0 -30 0 30 60 90 AMBIENT TEMPERATURE(℃) Marktech Optoelectronics www.marktechopto.com 2000/10/24 125-VS665N