MTE9040M Infrared Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃) ITEM CONDITIONS SYMBOL Power Output IF=20mA PO Forward Voltage IF=20mA VF Reverse Current VR=5V IR Peak Wavelength IF=20mA λp Spectral Line Half Width Δλ IF=20mA Half Intensity Beam Angle IF=20mA θ Rise Time IFP=50mA Tr Fall Time IFP=50mA Tf Junction Capacitance 1MHz ,V=0V Cj Temp. Coefficient of PO IF=10mA P/T Temp. Coefficient of VF IF=10mA V/T 60 50 40 30 20 10 0 120 350 300 250 200 150 100 50 1 2 0 3 20 40 60 80 100 80 60 40 20 0 -90 -60 FORWARD CURRENT(mA) FORWARD VOLTAGE(V) -30 0 30 60 90 BEAM ANGLE(deg.) 100 20 0 840 940 1040 WAVELENGTH(nm) To purchase this part contact Marktech Optoelectronics at 800.984.5337 70 60 50 40 30 20 10 0 -30 0 30 60 90 140 1.6 120 1.5 FORWARD VOLTAGE(V) 40 RELATIVE POWER OUTPUT(%) 80 60 FORWARD VOLTAGE vs TEMPERATURE IF=10mA POWER OUTPUT vs TEMPERATURE IF=10mA THERMAL DERATING CURVE 80 FORWARD CURRENT(mA) UNIT mA A V mW ℃ ℃ ℃ ℃ RELATIVE POWER OUTPUT(%) 1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) ITEM RATINGS SYMBOL Forward Current (DC) 60 IF Forward Current (Pulse)*1 0.5 IFP Reverse Voltage 5 VR Power Dissipation 100 PD Operating Temp. -20 TO 85 Topr Storage Temp. Tstg -30 TO 100 Junction Temp. 100 Tj Lead Soldering Temp.*2 260 Tls *1:Tw=10uS,T=10mS *2:Time 5 Sec max,Position:Up to 3mm from the body RADIATION PATTERN 0 0 UNIT mW 1.5 V 10 μA nm nm deg. μS μS pF %/℃ mV/℃ 120 RELATIVE POWER OUTPUT(%) RELATIVE POWER OUTPUT(%) FORWARD CURRENT(mA) SPECTRAL OUTPUT 70 MAX 940 50 ±80 1.0 1.0 20 -0.5 -1.3 400 80 ① Anode ② Cathode Dimensions (Unit:mm) ･High-output Power ･Compact ･High Reliability APPLICATIONS ･Optical Switches ･Optical Sensors TYP 4.0 1.2 RELATIVE POWER vs FORWARD CURRENT FORWARD I-V CHARACTERISTICS FEATURES MIN 100 80 60 40 20 0 -30 AMBIENT TEMPERATURE(℃) Marktech Optoelectronics www.marktechopto.com 0 30 60 90 AMBIENT TEMPERATURE(℃) 1.4 1.3 1.2 1.1 1 -30 0 30 60 90 AMBIENT TEMPERATURE(℃)