TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 DEVICES LEVELS 2N5151 2N5151L 2N5151U3 2N5153 2N5153L 2N5153U3 JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 100 Vdc Emitter-Base Voltage VEBO 5.5 Vdc IC 2.0 Adc Collector Current Total Power Dissipation 2N5151, 2N5153, L 2N5151, 2N5153, L 2N5151U3, 2N5153U3 2N5151U3, 2N5153U3 @ TA = +25°C (1) @ TC = +25°C (2) @ TA = +25°C (3) @ TC = +25°C (4) Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to Case Note: 1) 2) 3) 4) 1.0 10 1.16 100 PT W TJ , Tstg -65 to +200 °C RθJC 10 1.75 (U3) °C/W TO-5 2N5151L, 2N5153L (See Figure 1) Derate linearly 5.7mW/°C for TA > +25° Derate linearly 66.7mW/°C for TA > +25° Derate linearly 6.63mW/°C for TA > +25° Derate linearly 571mW/°C for TA > +25° ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 80 Max. Unit TO-39 (TO-205AD) 2N5151, 2N5153 OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 100mAdc, IB = 0 Vdc Emitter-Base Cutoff Current VEB = 4.0Vdc, IC = 0 VEB = 5.5Vdc, IC = 0 IEBO 1.0 1.0 µAdc mAdc Collector-Emitter Cutoff Current VCE = 60Vdc, VBE = 0 VCE = 100Vdc, VBE = 0 ICES 1.0 1.0 µAdc mAdc Collector-Base Cutoff Current VCE = 40Vdc, IB = 0 ICEO 50 µAdc T4-LDS-0132 Rev. 1 (091476) U-3 2N5151U3, 2N5153U3 Page 1 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 ELECTRICAL CHARACTERISTICS Parameters / Test Conditions ON CHARACTERTICS Forward-Current Transfer Ratio IC = 50mAdc, VCE = 5Vdc Symbol 2N5151 2N5153 IC = 2.5Adc, VCE = 5Vdc 2N5151 2N5153 IC = 5Adc, VCE = 5Vdc 2N5151 2N5153 Min. Max. Unit 20 50 hFE 30 70 90 200 20 40 Collector-Emitter Saturation Voltage IC = 2.5Adc, IB = 250mAdc IC = 5.0Adc, IB = 500mAdc VCE(sat) 0.75 1.5 Vdc Base-Emitter Voltage Non-Saturation IC = 2.5Adc, VCE = 5Vdc VBE 1.45 Vdc VBE(sat) 1.45 2.2 Vdc 250 pF Max. Unit Base-Emitter Saturation Voltage IC = 2.5Adc, IB = 250mAdc IC = 5.0Adc, IB = 500mAdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 500mAdc, VCE = 5Vdc, f = 10MHz 2N5151 2N5153 Common-Emitter Small-Signal Short-Circuit. Forward-Current Transfer Ratio IC = 100mAdc, VCE = 5Vdc, f = 1kHz 2N5151 2N5153 Output Capacitance VCB = 10Vdc, IE = 0, f = 1.0MHz |hfe| 6 7 hfe 20 50 Cobo SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Turn-On Time IC = 5Adc, IB1 = 500mAdc IB2 = -500mAdc RL = 6Ω VBE(OFF) = 3.7Vdc ton 0.5 μs Turn-Off Time IC = 5Adc, IB1 = 500mAdc IB2 = -500mAdc RL = 6Ω VBE(OFF) = 3.7Vdc toff 1.5 μs T4-LDS-0132 Rev. 1 (091476) Page 2 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 SWITCHING CHARACTERISTICS (cont.) Parameters / Test Conditions Symbol IC = 5Adc, IB1 = 500mAdc IB2 = -500mAdc RL = 6Ω VBE(OFF) = 3.7Vdc Storage Time Fall Time Min. Max. Unit ts 1.4 μs tf 0.5 μs SAFE OPERATING AREA DC Tests TC = +25°C, 1 Cycle, tP = 1.0s Test 1 VCE = 5.0Vdc, IC = 2.0Adc Test 2 VCE = 32Vdc, IC = 310mAdc Test 3 VCE = 80Vdc, IC = 14.5mAdc FIGURE 1 (TO-5, TO-39) PACKAGE DIMENSIONS Symbol Dimensions Inches Millimeters Min Max Min Max CD .305 .335 7.75 8.51 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 LC LD LL LU .200 TP .016 0.41 0.53 6 7 8, 9 See notes 8, 9, 12, 13 .016 L1 L2 .021 5.08 TP Notes .019 0.41 .050 .250 Q 0.48 1.27 6.35 .050 8, 9 8, 9 8, 9 1.27 6 TL .029 .045 0.74 1.14 4, 5 TW .028 .034 0.71 0.86 3 0.25 11 r α P .010 45° TP .100 45° TP 7 2.54 T4-LDS-0132 Rev. 1 (091476) Page 3 of 4 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 NOTES: 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Dimensions are in inches. Millimeters are given for general information only. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). TL measured from maximum HD. Outline in this zone is not controlled. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. LU applied between L1 and L2. LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. All three leads. The collector shall be electrically and mechanically connected to the case. r (radius) applies to both inside corners of tab. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. For transistor types 2N5151 and 2N5153, LL is .5 inch (13 mm) minimum, and .75 inch (19 mm) maximum. For transistor types 2N5151L and 2N5153L, LL is 1.5 inch (38 mm) minimum and 1.75 inch (44.4 mm) maximum. Lead designation, depending on device type, shall be as follows: lead numbering; lead 1 = emitter, lead 2 = base, and lead 3 = collector. FIGURE 2 (U3) PACKAGE DIMMENSIONS Dimensions Symbol Millimeters Inches Min Max Min Max BL .395 .405 10.04 10.28 BW .291 .301 7.40 7.64 CH .1085 .1205 2.76 3.06 LH .010 .020 0.25 0.51 LL1 .220 .230 5.59 5.84 LL2 .115 .125 2.93 3.17 LS1 .150 BSC 3.81 BSC LS2 .075 BSC 1.91 BSC LW1 .281 .291 7.14 7.39 LW2 .090 .100 2.29 2.54 Q1 .030 0.762 Q2 .030 0.762 NOTES: 1 2 3 Dimensions are in inches. Millimeters are given for general information only. Terminal 1 - collector, terminal 2 - base, terminal 3 - emitter T4-LDS-0132 Rev. 1 (091476) Page 4 of 4