MICROSEMI 0405

0405-1000M Rev C
.
0405-1000M
1000 Watts - 40 Volts, 300µs, 10%
UHF Pulsed Radar 400 - 450 MHz
GENERAL DESCRIPTION
The 0405-1000M is an internally matched, COMMON EMITTER transistor
capable of providing 1000 Watts of pulsed RF output power in a push-pull
configuration at three hundreds microsecond pulse width ten percent duty
factor across the frequency band 400-450 MHz. This hermetically sealed
transistor is specifically designed for medium pulse radar applications. It
utilizes gold metallization and diffused emitter ballasting to provide high
reliability and supreme ruggedness.
CASE OUTLINE
55SL, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC1
1400 Watts
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
85 Volts
3.5 Volts
70 Amps
- 65 to + 200oC
+ 200oC
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL
CHARACTERISTICS
Pout
Pin
Pg
ηc
Pd
VSWR1
Power Out (Note 2) Pulsed
Power Input, Pulsed
Power Gain
Collector Efficiency
Pulse Amplitude Droop
Load Mismatch Tolerance
TEST CONDITIONS
MIN
F = 400, 425,450 MHz
Vcc = 40 Volts,
Pulse Width = 300 µs
Duty = 10 %
As above
F = 425MHz, Po =1000W
1000
TYP
MAX
112
9.5
45
10
0.7
2:1
UNITS
Watts
Watts
dB
%
dB
FUNCTIONAL CHARACTERISTICS @ 25 OC
Bvces
Ices
Iebo
Hfe
θjc1
Collector to Emitter Breakdown
Collector to Emitter Leakage
Emitter to Base Leakage Current
DC Current Gain
Thermal Resistance
Ic = 50 mA
Vce = 50 Volts
Veb = 3.0 Volts
Vce = 5 V, Ic = 1000mA
Rated Pulse Condition
75
30
25
Volts
mA
mA
10
0.08
o
C/W
Issue Nov. 2006
Note 1: Pulse width = 300 us, duty = 10%
Note 2: Power Input = 112 Watts max Peak Pulsed
Note 3: This part is tested at fixed Pout=1000W.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 TEL. 408-986-8031 FAX 408-869-2324
0405-1000M Rev C
0405-1000M
.
Performance Curves
0405-1000M
Pout Vs. Pin @300uS10%40V
1400
O
utputPower(W
)
1200
1000
400MHz
800
425MHz
600
450MHz
400
200
0
0.0
20.0
40.0
60.0
80.0
100.0
120.0
Input Power (W)
0405-1000M
Efficiency Vs. Pin @300uS10%40V
100%
90%
80%
E
fficiency
70%
60%
50%
40%
400MHz
30%
425MHz
20%
450MHz
10%
0%
0.0
20.0
40.0
60.0
80.0
100.0
120.0
Input Power(W)
0405-1000M
Band Width@300uS10%40V
12
11.5
11
10.5
10
Pout(W
)
9.5
Pin=95W
9
8.5
8
7.5
7
6.5
6
5.5
5
400
405
410
415
420
425
430
435
440
445
450
Frequency(MHz)
Single-Ended Impedance Information
Single-Ended Impedance
Freq
Zs
Zl
400
1.39-j2.9
0.79-j2.41
425 1.94-j2.93 0.86-j2.55
450 2.21-j3.07 0.91-j2.95
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 TEL. 408-986-8031 FAX 408-869-2324
0405-1000M Rev C
0405-1000M
Broadband Test Fixture
Board Material ARLON 2.55 31 Mil
TRL Measurement
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 TEL. 408-986-8031 FAX 408-869-2324
0405-1000M Rev C
0405-1000M
Case Outline
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 TEL. 408-986-8031 FAX 408-869-2324