2731-100MR3 2731-100M 100 Watts, 36 Volts, 200µs, 10% Radar 2700-3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55KS-1 Common Base The 2731-100M is an internally matched, COMMON BASE bipolar transistor capable of providing 100 Watts of pulsed RF output power at 200µs pulse width, 10% duty factor across the 2700 to 3100 MHz band. The transistor prematch and test fixture has been optimized through the use of 10 Ohm TRL Analysis. This ceramic sealed transistor is specifically designed for S-band radar applications. It utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation 575 Device Dissipation @ 25°C1 Maximum Voltage and Current Collector to Base Voltage (BVces) 65 Emitter to Base Voltage (BVebo) 3.0 Collector Current (Ic) 15.0 Maximum Temperatures Storage Temperature -65 to +200 Operating Junction Temperature +200 W V V A °C °C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL CHARACTERISTICS Pout Pg ηc Rl Pd VSWR-T Power Output Power Gain Collector Efficiency Return Loss Pulse Droop Load Mismatch Tolerance TEST CONDITIONS MIN TYP MAX UNITS F=2700-3100 MHz Pulse Width = 200 µs Duty Factor = 10 % Power Input = 16W Vcc = +36V F = 2700, 2900, 3100 MHz 100 8.0 40 -7 115 8.5 140 9.4 W dB % dB dB 0.6 2:1 FUNCTIONAL CHARACTERISTICS @ 25°C BVebo BVces hFE θjc1 Emitter to Base Breakdown Collector to Emitter Breakdown DC – Current Gain Thermal Resistance Ie = 30 mA Ic = 120 mA Vce = 5V, Ic = 600 mA 3.0 65 V V 15 0.43 °C/W Issue March 2006 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 2731-100MR3 2731-100M Vcc = 36 Volts, Pulse Width = 200µs, Duty = 10 % Pin vs. Pout 140.0 2.7GHz Pout (Watts) 120.0 2.8GHz 100.0 80.0 2.9GHz 60.0 40.0 3.0GHz 20.0 3.1GHz 0.0 0.0 5.0 10.0 15.0 20.0 25.0 Pin (Watts) Efficiency vs. Frequency 55 Efficiency (%) 50 45 40 35 30 2.65 2.7 2.75 2.8 2.85 2.9 2.95 3 3.05 3.1 3.15 Frequency (GHz) Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 2731-100MR3 Gain (dB) Gain vs. Frequency 9 8 7 6 5 4 3 2 1 0 2.6 2.7 2.8 2.9 3 3.1 3.2 Frequency (GHz) Impedance curves will be added at the completion of the characterization. Impedance Data Freq (GHz) Zs 2.7 8.87-j12.64 2.8 8.24-j10.26 2.9 8.54-j8.06 3.0 9.85-j6.05 3.1 10.26-j4.88 Zl 4.33-j4.67 3.95-j4.94 3.47-j5.08 2.96-j5.06 2.48-j4.92 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 2731-100MR3 Circuit Component Item C1 C2 C3 C4 R1 R2 L1 L2 Material Description Chip Cap A size Chip Cap B size Chip Cap B size Electrolytic Cap Chip resistor Fix resistor Silver ribbon Copper wire Roger-Duroid Value 9.1pF 10,000pF 100pF 2200uF 20 ohms 1.5 ohms L=870 Mil, W=70 Mil. 21 AWG, 560 Mil 6006 @ 25Mil, Er=6.15, 1Oz Cu Physical Circuit Dimension Item D1 D2 D3 D4 D5 D6 D7 D8 D9 D10 D11 D12 W (Mil) 35 318 58 500 124 530 770 200 48 272 35 35 L (Mil) 210 158 114 195 161 156 196 176 92 119 150 200 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. 2731-100MR3 2731-100M Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.