APT94N60L2C3
600V 94A 0.035Ω
Super Junction MOSFET
TO-264
Max
COOLMOS
Power Semiconductors
• Ultra low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• TO-264 Max Package
D
G
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
MAXIMUM RATINGS
Symbol
VDSS
ID
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT94N60L2C3
UNIT
600
Volts
Drain-Source Voltage
94
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±20
VGSM
Gate-Source Voltage Transient
±30
Total Power Dissipation @ TC = 25°C
833
Watts
Linear Derating Factor
6.67
W/°C
PD
TJ,TSTG
TL
dv/
dt
282
-55 to 150
Operating and Storage Junction Temperature Range
°C
Lead Temperature: 0.063" from Case for 10 Sec.
300
Drain-Source Voltage slope (VDS = 480V, ID = 94A, TJ = 125°C)
50
V/ns
20
Amps
IAR
Repetitive Avalanche Current
7
EAR
Repetitive Avalanche Energy
7
EAS
Volts
Single Pulse Avalanche Energy
1
4
mJ
1800
STATIC ELECTRICAL CHARACTERISTICS
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA)
Drain-Source On-State Resistance
2
TYP
600
(VGS = 10V, 60A)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
0.03
0.035
1.0
50
500
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
2.10
UNIT
Volts
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TJ = 150°C)
Gate Threshold Voltage (VDS = VGS, ID = 5.4mA)
MAX
3
Ohms
µA
±200
nA
3.9
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
"COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG"
™
6-2006
BVDSS
Characteristic / Test Conditions
050-7148 Rev D
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT94N60L2C3
Test Conditions
Characteristic
MIN
TYP
C iss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
4400
Reverse Transfer Capacitance
f = 1 MHz
290
VGS = 10V
505
VDD = 300V
48
Crss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
ID = 94A @ 25°C
tf
RG = 0.9Ω
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
110
165
8
12
ns
2040
VDD = 400V, VGS = 15V
6
nC
27
VDD = 380V
ID = 94A @ 125°C
Fall Time
640
18
VGS = 13V
Turn-off Delay Time
pF
240
RESISTIVE SWITCHING
Rise Time
td(off)
UNIT
13600
VGS = 0V
3
MAX
ID = 94A, RG = 5Ω
3515
INDUCTIVE SWITCHING @ 125°C
2920
VDD = 400V VGS = 15V
µJ
3970
ID = 94A, RG = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -94A, dl S/dt = 100A/µs, VR = 350V)
861
ns
Q
Reverse Recovery Charge (IS = -94A, dl S /dt = 100A/µs, VR = 350V)
46
µC
rr
dv/
dt
Peak Diode Recovery
dv/
94
282
(Body Diode)
1
(VGS = 0V, IS = - 94A)
dt
1.2
Amps
Volts
6
V/ns
MAX
UNIT
5
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.15
62
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 36.0mH, RG = 25Ω, Peak IL = 10A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID94A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as PAV=EAR*f
0.9
0.12
0.7
0.10
0.5
0.08
Note:
0.06
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7148 Rev D
6-2006
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.16
0.14
0.3
0.04
0
SINGLE PULSE
0.1
0.02
0.05
10-5
10-4
°C/W
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT94N60L2C3
200
VGS =15 &10V
TC ( C)
0.0618
0.0885
Dissipated Power
(Watts)
0.0230
ZEXT
TJ ( C)
0.436
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
ID, DRAIN CURRENT (AMPERES)
180
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55°C
160
140
120
100
80
TJ = +25°C
60
40
TJ = +125°C
20
0
1
2
3
4
5
6
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
60
40
20
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
3
4.5V
40
4V
20
1.40
NORMALIZED TO
= 10V @ 47A
V
GS
1.30
1.20
1.10
VGS=10V
1.00
VGS=20V
0.90
0.80
0
I
D
V
40 60 80 100 120 140 160 180
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
0.85
1.2
= 47A
GS
20
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
60
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
6-2006
ID, DRAIN CURRENT (AMPERES)
80
0
-50
5V
80
1.15
100
2.5
100
050-7148 Rev D
0
120
0
5
10
15
20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
180
5.5V
140
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
200
6V & 6.5V
160
Typical Performance Curves
APT94N60L2C3
60,000
ID, DRAIN CURRENT (AMPERES)
Ciss
Graph removed
C, CAPACITANCE (pF)
10,000
Coss
1,000
100
Crss
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I
= 94A
D
12
VDS= 120V
VDS= 300V
8
VDS= 480V
4
0
0
100 200 300 400 500 600 700 800
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
10
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
250
600
V
DD
R
G
= 5Ω
T = 125°C
200
J
tf
L = 100µH
= 400V
= 5Ω
T = 125°C
J
300
= 400V
DD
G
tr and tf (ns)
400
V
R
td(off)
500
td(on) and td(off) (ns)
100
L = 100µH
200
150
100
tr
50
100
td(on)
0
10
0
10
70
90
110 130 150
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
8000
7000
30
V
DD
R
G
50
70
90
110 130 150
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
16000
= 400V
= 5Ω
T = 125°C
V
E ON includes
diode reverse recovery.
Eoff
4000
3000
Eon
2000
= 94A
12000
L = 100µH
E ON includes
T = 125°C
Eoff
diode reverse recovery.
10000
8000
6000
4000
Eon
2000
1000
0
10
= 400V
I
D
50
J
L = 100µH
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
6-2006
050-7148 Rev D
5000
DD
14000
J
6000
30
30
50
70
90
110 130 150
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT94N60L2C3
Gate Voltage
10%
T
90%
Gate Voltage
TJ = 125 C
td(on)
td(off)
tr
Collector Current
Collector Current
TJ = 125 C
tf
90%
90%
5%
5%
10%
Collector Voltage
0
10%
Collector Voltage
Switching Energy
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60
V DD
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-264 MAXTM(L2) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
25.48 (1.003)
26.49 (1.043)
19.81 (.780)
21.39 (.842)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
6-2006
2.29 (.090)
2.69 (.106)
050-7148 Rev D
Drain
5.79 (.228)
6.20 (.244)