650V
94A
APT94N65B2C3
APT94N65B2C3G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
COOLMOS
Super Junction MOSFET
Power Semiconductors
T-MaxTM
• Ultra Low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• Extreme dv/dt Rated
D
• Dual die (parallel)
G
• Popular T-MAX Package
S
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
All Ratings per die: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VDSS
ID
Parameter
APT94N65B2C3(G)
UNIT
650
Volts
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
1
94
Amps
60
Continuous Drain Current @ TC = 100°C
2
282
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
20
Volts
PD
Total Power Dissipation @ TC = 25°C
833
Watts
TJ,TSTG
TL
dv
/dt
Operating and Storage Junction Temperature Range
-55 to 150
°C
Lead Temperature: 0.063" from Case for 10 Sec.
260
Drain-Source Voltage slope (VDS = 480V, ID = 94A, TJ = 125°C)
50
V/ns
7
Amps
2
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
3
1
( Id = 3.5A, Vdd = 50V )
mJ
1800
( Id = 3.5A, Vdd = 50V )
STATIC ELECTRICAL CHARACTERISTICS
BV(DSS)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 500μA)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source On-State Resistance
MIN
3
TYP
MAX
Volts
650
(VGS = 10V, ID = 47A)
0.03
0.035
Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V)
1.0
50
Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V, TC = 150°C)
100
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5.8mA)
2.1
Ohms
μA
±200
nA
3.9
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG."
Microsemi Website - http://www.microsemi.com
UNIT
2-2011
Characteristic / Test Conditions
050-8069 Rev C
Symbol
APT94N65B2C3(G)
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
f = 1 MHz
Crss
Qg
Qgs
4
VGS = 10V
Gate-Source Charge
VDD = 300V
Total Gate Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
td(off)
tf
MIN
Test Conditions
Ciss
TYP
13940
5200
INDUCTIVE SWITCHING
VGS = 15V
VDD = 400V
Turn-off Delay Time
ID = 94A @ 25°C
RG = 4.3Ω
167
5
INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V
2684
ID = 94A, RG = 4.3Ω
4448
5
INDUCTIVE SWITCHING @ 125°C
VDD = 400V, VGS = 15V
3391
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
UNIT
pF
229
580
72
234
32
59
498
ID = 94A @ 25°C
Rise Time
MAX
nC
ns
μJ
5082
ID = 94A, RG = 4.3Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
IS
Continuous Source Current (Body Diode)
94
ISM
Pulsed Source Current
282
VSD
Diode Forward Voltage
2
4
(Body Diode)
(VGS = 0V, IS = -94A)
0.9
t rr
Reverse Recovery Time
(IS = -94A, di/dt = 100A/μs)
Tj = 25°C
Q rr
Reverse Recovery Charge
(IS = -94A, di/dt = 100A/μs)
Tj = 25°C
IRRM
Peak Recovery Current
(IS = -94A, di/dt = 100A/μs)
Tj = 25°C
1.2
960
UNIT
Amps
Volts
ns
1271
31
μC
43
58
Amps
56
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
MAX
0.15
31
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 Repetitive avalanche causes additional power losses that can be calculated as PAV = EAR*f . Pulse width tp limited by Tj max.
3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
D = 0.9
0.7
0.10
0.5
0.08
Note:
0.06
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
050-8069 Rev C
2-2011
0.16
0.12
0.3
0.04
t1
t2
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.1
0.02
SINGLE PULSE
0.05
0
10-5
10-4
10-3
°C/W
4 See MIL-STD-750 Method 3471
5 Eon includes diode reverse recovery.
6 Maximum 125°C diode commutation speed = di/dt 600A/μs
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.14
UNIT
10-2
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.1
APT94N65B2C3G
Typical Performance Curves
250
10 &15V
160
6.5V
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
140
6V
150
5.5V
100
5V
50
120
ID, DRAIN CURRENT (A)
100
80
60
40
TJ= 25°C
4.5V
20
4V
0
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 2, Low Voltage Output Characteristics
1.4
GS
VGS = 10V
IDR, REVERSE
VGS = 20V
1
4
5
6
7
8
80
70
60
50
40
30
10
0.8
0
40
80
120
160
ID, DRAIN CURRENT (A)
FIGURE 4, RDS(ON) vs Drain Current
.05
1
.95
-50
0
50
100
25
50
75
100
125
150
TC, CASE TEMPERATURE (C°)
FIGURE 5, Maximum Drain Current vs Case Temperature
3.0
1. 1
0.
0
200
RDS(ON), DRAIN-TO-SOURCE ON
RESISTANCE (NORMALIZED)
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
3
20
0.9
.15
2.5
2.0
1.5
1
0.5
0
150
TJ, Junction Temperature (°C)
FIGURE 6, Breakdown Voltage vs Temperature
-50
0
50
100
150
TJ, JUNCTION TEMPERATURE (C°)
FIGURE 7, On-Resistance vs Temperature
800
1.2
1.1
ID, DRAIN CURRENT (A)
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
2
90
= 10V @ 47A
1.2
1.1
1
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 3, Transfer Characteristics
ID, DRAIN CURRENT (A)
V
0
100
NORMALIZED TO
1.3
TJ= -55°C
TJ= 125°C
100
1
0.9
0.8
0.7
0.6
10µs
10
100µs
1ms
10ms
100ms
DC line
-50
0
50
100
150
TC, Case Temperature (°C)
FIGURE 8, Threshold Voltage vs Temperature
1
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 9, Maximum Safe Operating Area
050-8069 Rev C 2-2011
IC, DRAIN CURRENT (A)
200
APT94N65B2C3G
Typical Performance Curves
12
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
60,000
Ciss
C, CAPACITANCE (pF)
10,000
1,000
Coss
Crss
100
10
0
100
200
300
400
500
600
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 10, Capacitance vs Drain-To-Source Voltage
TJ = =25°C
10
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
FIGURE 12, Source-Drain Diode Forward Voltage
V
DD
VDS= 325V
50
G
4
2
0
0
200
400
600
800
Qg, TOTAL GATE CHARGE (nC)
FIGURE 11, Gate Charges vs Gate-To-Source Voltage
700
td(off)
500
V
400
DD
R
G
= 400V
= 4.3 Ω
T = 125°C
J
L = 100μH
300
200
0
40
V
T = 125°C
J
L = 100μH
tf
00
tr
50
80
120
160
ID (A)
FIGURE 13, Delay Times vs Current
DD
R
50
10000
G
= 400V
= 4.3Ω
T = 125°C
J
Eoff
L = 100μH
EON includes
8000
diode reverse recovery.
6000
4000
Eon
2000
0
40
80
120
160
ID (A)
FIGURE 14 , Rise and Fall Times vs Current
18000
V
DD
= 400V
16000
I = 94A
14000
T = 125°C
J
L = 100μH
D
Eoff
EON includes
12000
diode reverse recovery.
10000
8000
6000
Eon
4000
2000
0
td(on)
= 4.3Ω
00
0
VDS= 520V
6
12000
= 400V
SWITCHING ENERGY (μJ)
R
tr, and tf (ns)
VDS= 130V
8
0
0.3
00
SWITCHING ENERGY (uJ)
10
100
1
050-8069 Rev C 2-2011
D
600
TJ= +150°C
td(on) and td(off) (ns)
IDR, REVERSE DRAIN CURRENT (A)
100
I = 94A
0
10
20
30
40
50
RG, GATE RESISTANCE (Ohms)
FIGURE 16, Switching Energy vs Gate Resistance
0
0
25
50
75
100
125 150
ID (A)
FIGURE 15, Switching Energy vs Current
APT94N65B2C3G
Typical Performance Curves
Gate Voltage
T
10%
90%
Gate Voltage
TJ = 125 C
TJ = 125 C
td(on)
td(off)
tr
Collector Current
Collector Current
tf
90%
90%
5%
5%
10%
Collector Voltage
0
10%
Collector Voltage
Switching Energy
Switching Energy
Figure 18, Turn-off Switching Waveforms and Definitions
Figure 17, Turn-on Switching Waveforms and Definitions
75DQ60
APT30DF60
IC
V CE
G
D.U.T.
Figure
19,20,
Inductive
Switching
Test
Circuit
Figure
Inductive
Switching
Test
Circuit
T-MAX® (B2) Package Outline
e1 100% Sn Plated
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
050-8069 Rev C 2-2011
Drain
V DD