APT50DL60B(G) APT50DL60S(G) 600V 50A *G Denotes RoHS Compliant, Pb Free Terminal Finish. Ultrasoft Recovery Rectifier Diode (B) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Ultrasoft Recovery Times (trr) • Soft Switching - High Qrr • Popular TO-247 Package or Surface Mount D3PAK Package • Low Noise Switching - Reduced Ringing • Ultra Low Forward Voltage • Higher Reliability Systems • Low Leakage Current • Minimizes or eliminates snubber • Applications - Induction Heating • Resonant Mode Circuits -ZVS and ZCS Topologies - Phase Shifted Bridge TO - 24 7 D3PAK 1 2 1 2 (S) 2 1 1 - Cathode 2 - Anode Back of Case - Cathode All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol VR Characteristic / Test Conditions Ratings Unit 600 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward current (TC = 124°C, Duty Cycle = 0.5) 50 IF(RMS) RMS Forward Currrent (Square wave, 50% duty) 150 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms) 320 IFSM TJ, TSTG TL Operating and Storage Junction Temperature Range Amps -55 to 175 °C Lead Temperature for 10 Seconds 300 STATIC ELECTRICAL CHARACTERISTICS VF Characteristic / Test Conditions Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V Min Typ Max IF = 50A 1.25 1.6 IF = 100A 2.0 IF = 50A, TJ = 125°C 1.25 Volts VR = 600V 25 VR = 600V, TJ = 125°C 250 μA 51 Microsemi Website - http://www.microsemi.com Unit pF 052-6315 Rev B 12 - 2008 Symbol APT50DL60B_S(G) DYNAMIC CHARACTERISTICS Symbol Characteristic / Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Maximum Reverse Recovery Current trr Min Typ IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C Max Unit 52 ns 399 IF = 50A, diF/dt = -200A/μs VR = 400V, TC = 25°C Reverse Recovery Time IF = 50A, diF/dt = -200A/μs VR = 400V, TC = 125°C 1498 nC 9 Amps 449 ns 3734 nC Qrr Reverse Recovery Charge IRRM Maximum Reverse Recovery Current 15 Amps trr Reverse Recovery Time 284 ns Qrr Reverse Recovery Charge 5134 nC IRRM Maximum Reverse Recovery Current 34 Amps IF = 50A, diF/dt = -1000A/μs VR = 400V, TC = 125°C THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RθJC Junction-to-Case Thermal Resistance WT Min Typ Unit 0.63 °C/W 0.22 oz 5.9 g Package Weight Torque 0.7 0.6 0.5 0.4 0.3 Note: 0.2 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 10 lb·in 1.1 N·m Maximum Mounting Torque Microsemi reserves the right to change, without notice, the specifications and information contained herein. t1 t2 0.1 0 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TC (°C) 0.316 Dissipated Power (Watts) 0.00467 0.312 0.1483 ZEXT TJ (°C) 052-6315 Rev B 12 - 2008 Max ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL APT50DL60B_S(G) TYPICAL PERFORMANCE CURVES 700 120 TJ= 125°C TJ= 55°C 80 TJ= 25°C 60 40 20 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 8000 100A R 6000 50A 5000 25A 4000 3000 2000 1000 0 0.8 200 100 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change T = 125°C J V = 400V 40 R 50A 100A 35 30 25A 25 20 15 10 5 0 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 140 120 IRRM 100 80 60 0.4 40 0.2 0 20 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 6, Dynamic Parameters vs Junction Temperature 500 0 Duty cycle = 0.5 TJ = 126°C 25 50 75 100 125 150 175 Case Temperature (°C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature 450 400 350 300 250 200 150 100 50 0 0 10 100 400 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage 052-6315 Rev B 12 - 2008 CJ, JUNCTION CAPACITANCE (pF) 25A 300 tRR QRR 0.6 400 0 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.2 1.0 50A 45 T = 125°C J V = 400V 7000 500 IRRM, REVERSE RECOVERY CURRENT (A) Qrr, REVERSE RECOVERY CHARGE (nC) 0 R 600 trr, COLLECTOR CURRENT (A) IF, FORWARD CURRENT (A) 100 0 T = 125°C J V = 400V 100A TJ= 150°C APT50DL60B_S(G) Vr diF /dt Adjust +18V 0V D.U.T. trr/Qrr Waveform CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 1 4 6 Zero 5 5 Qrr - Area Under the Curve Defined by IRRM and trr. 6 diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr. 0.25 IRRM 3 Slope = diM/dt 2 Figure 10, Diode Reverse Recovery Waveform and Definitions 3 D PAK Package Outline TO-247 Package Outline e1 SAC: Tin, Silver, Copper 15.49 (.610) 16.26 (.640) Cathode 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) 4.90 (.193) 5.10 (.201) 1.45 (.057) 1.60 (.063) 15.85 (.624) 16.05(.632) 1.00 (.039) 1.15(.045) 20.80 (.819) 21.46 (.845) 0.40 (.016) 0.65 (.026) 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 0.020 (.001) 0.250 (.010) 2.70 (.106) 2.90 (.114) 1.15 (.045) 1.45 (.057) 1.20 (.047) 1.90 (.075) 1.40 (.055) 2.10 (.083) 5.45 (.215) BSC (2 Plcs.) Anode 2.21 (.087) 2.59 (.102) Cathode 10.90 (.430) BSC Dimensions in Millimeters and (Inches) 13.30 (.524) 13.60(.535) 12.40 (.488) 12.70 (.500) 18.70 (.736) 19.10 (.752) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 052-6315 Rev B 12 - 2008 Cathode (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) e1 100% Sn 2.40 (.094) 2.70 (.106) (Base of Lead) Heat Sink (Cathode) and Leads are Plated Anode Cathode Dimensions in Millimeters (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.