1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode APT100S20B 200V 120A 1 2 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Soft Recovery Characteristics • Low Losses • • • • • -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) 48 Volt Output Rectifiers High Speed Rectifiers • Popular TO-247 Package or Surface Mount D3PAK Package • Low Forward Voltage • High Blocking Voltage • Low Leakage Current MAXIMUM RATINGS Symbol VR • Increased System Power Density APT100S20B UNIT 200 Volts Maximum D.C. Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current TJ,TSTG • Higher Reliability Systems Characteristic / Test Conditions Maximum Peak Repetitive Reverse Voltage IFSM • Cooler Operation All Ratings: TC = 25°C unless otherwise specified. VRRM IF(RMS) • Low Noise Switching 1 120 (TC = 125°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) 1 318 Amps 1000 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) -55 to 150 Operating and StorageTemperature Range TL Lead Temperature for 10 Sec. 300 EVAL Avalanche Energy (2A, 50mH) 100 °C mJ STATIC ELECTRICAL CHARACTERISTICS Forward Voltage TYP MAX IF = 100A .89 .95 IF = 200A 1.06 IF = 100A, TJ = 125°C IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V Volts .76 VR = 200V 2 VR = 200V, TJ = 125°C Microsemi Website - http://www.microsemi.com UNIT 40 470 mA pF 5-2006 VF MIN 053-6021 Rev C Symbol DYNAMIC CHARACTERISTICS APT100S20B Characteristic Symbol Test Conditions trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM MIN TYP - 70 ns - 230 nC - 6 - 110 ns - 690 nC - 11 - 95 ns - 1750 nC - 32 Amps MIN TYP IF = 100A, diF/dt = -200A/µs VR = 133V, TC = 25°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 100A, diF/dt = -200A/µs VR = 133V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 100A, diF/dt = -700A/µs VR = 133V, TC = 125°C Maximum Reverse Recovery Current MAX - - UNIT Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RθJC Junction-to-Case Thermal Resistance WT Package Weight Torque MAX UNIT .18 °C/W 0.22 oz 5.9 g Maximum Mounting Torque 10 lb•in 1.1 N•m Microsemi reserves the right to change, without notice, the specifications and information contained herein. 1 Countinous current limited by package lead temperature. 0.18 D = 0.9 0.16 0.14 0.7 0.12 0.10 0.5 Note: PDM 0.08 0.3 0.06 0.1 0.05 0.02 0 10-5 Duty Factor D = t1/t2 SINGLE PULSE Peak TJ = PDM x ZθJC + TC 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TJ ( C) TC ( C) 5-2006 0.00817 053-6021 Rev C t1 t2 0.04 0.0174 0.0593 0.095 Dissipated Power (Watts) 0.00514 0.00242 0.0158 0.384 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL ZEXT Z JC, THERMAL IMPEDANCE (°C/W) θ 0.20 TYPICAL PERFORMANCE CURVES 180 TJ = 25°C TJ = 125°C 60 0 TJ = 150°C 0 Qrr, REVERSE RECOVERY CHARGE (nC) 2500 TJ = -55°C 130A 100A 1000 50A 500 60 40 20 TJ = 125°C VR = 133V TJ = 125°C VR = 133V 35 130A 30 25 20 100A 15 50A 10 5 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 400 1.2 t rr 300 I RRM 0.8 Qrr 0.6 Duty cycle = 0.5 TJ = 150°C Q rr t rr IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 700A/µs) 80 0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 0 1.0 130A 50A 100 40 2000 0 100A 0 0.5 1.0 1.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage TJ = 125°C VR = 133V 1500 trr, REVERSE RECOVERY TIME (ns) 240 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 300 120 APT100S20B 120 360 200 Lead Temperature Limited 0.4 100 0.2 0.0 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 25 50 75 100 125 150 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 5000 4000 3000 5-2006 2000 1000 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-6021 Rev C CJ, JUNCTION CAPACITANCE (pF) 6000 APT100S20B Vr diF /dt Adjust +18V APT20M20LLL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 3 0.25 IRRM 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions TO-247 Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Cathode 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 053-6021 Rev C 5-2006 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) Anode 2.21 (.087) 2.59 (.102) Cathode 10.90 (.430) BSC Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.