600V 15A APT15D60K APT15D60SA APT15D60KG* APT15D60SAG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters -Inverters • Snubber Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching D2PAK 1 • Cooler Operation • Popular TO-220 Package or Surface Mount D2 PAK Package • Higher Reliability Systems • Low Forward Voltage • Low Leakage Current • PFC 2 2 1 • Increased System Power Density 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol VR All Ratings: TC = 25°C unless otherwise specified. Characteristic / Test Conditions APT15D60K(G)_SA(G) UNIT 600 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 133°C, Duty Cycle = 0.5) 15 RMS Forward Current (Square wave, 50% duty) 32 IF(RMS) IFSM TJ,TSTG TL Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Amps 110 -55 to 175 Operating and StorageTemperature Range °C 300 Lead Temperature for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V MIN TYP MAX IF = 15A 1.6 1.8 IF = 30A 1.9 IF = 15A, TJ = 125°C 1.4 Volts VR = VR Rated 250 VR = VR Rated, TJ = 125°C 500 Microsemi Website - http://www.microsemi.com 23 UNIT µA pF 11-2008 VF Characteristic / Test Conditions 053-6010 Rev K Symbol DYNAMIC CHARACTERISTICS Symbol APT15D60K(G)_SA(G) Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM trr MIN TYP - 21 - 80 - 95 - 3 - 150 ns - 520 nC - 7 - 60 ns - 810 nC - 22 Amps MIN TYP IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C VR = 400V, TC = 25°C Reverse Recovery Time Qrr IF = 15A, diF/dt = -200A/µs Reverse Recovery Charge IRRM trr VR = 400V, TC = 125°C Maximum Reverse Recovery Current Reverse Recovery Time Qrr IF = 15A, diF/dt = -1000A/µs Reverse Recovery Charge IRRM VR = 400V, TC = 125°C Maximum Reverse Recovery Current UNIT ns IF = 15A, diF/dt = -200A/µs Maximum Reverse Recovery Current MAX nC - - Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RθJC Junction-to-Case Thermal Resistance RθJA Junction-to-Ambient Thermal Resistance WT °C/W 80 0.07 oz 1.9 g Maximum Mounting Torque 10 lb•in 1.1 N•m Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 0.9 1.00 0.7 0.80 0.5 Note: 0.60 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 1.40 1.20 0.3 0.40 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.1 SINGLE PULSE 0.05 0 10 -5 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 10 -4 RC MODEL 11-2008 Junction temp (°C) 053-6010 Rev K t1 t2 0.20 UNIT 1.35 Package Weight Torque MAX 0.583 °C/W 0.00222 J/°C 0.767 °C/W 0.0598 J/°C Power (watts) Case temperature (°C) FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL APT15D60K(G)_SA(G) TYPICAL PERFORMANCE CURVES 180 50 40 30 TJ = 25°C TJ = 125°C 20 TJ = 150°C 10 trr, REVERSE RECOVERY TIME (ns) IF, FORWARD CURRENT (A) 60 TJ = -55°C 0 0.5 1 1.5 2 2.5 3 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage Qrr, REVERSE RECOVERY CHARGE (nC) 1200 T = 125°C J V = 400V R 30A 1000 800 15A 600 400 7.5A 200 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 1.0 IRRM 0.8 120 15A 100 7.5A 80 60 40 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change T = 125°C J V = 400V R 30A 25 20 15 15A 10 7.5A 5 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 40 Duty cycle = 0.5 T = 175°C J 35 trr Qrr 30 0 Qrr 0.6 0.4 140 0 30 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) trr R 30A 20 IRRM, REVERSE RECOVERY CURRENT (A) 0 T = 125°C J V = 400V 160 25 20 15 10 0.2 0.0 5 0 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 25 50 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 140 120 100 11-2008 80 60 40 20 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-6010 Rev K CJ, JUNCTION CAPACITANCE (pF) 160 APT15D60K(G)_SA(G) Vr diF /dt Adjust +18V APT5018BLL 0V D.U.T. 30μH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 0.25 IRRM 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions TO-263 D2 (SA) Package Outline TO-220 (K) Package Outline e3 100% Sn Cathode (Heat Sink) e3 100% Sn 4.45 (.175) 4.57 (.180) 1.27 (.050) 1.32 (.052) 0.050 (.002) 10.06 (.396) 10.31(.406) 1.40 (.055) 1.65 (.065) 8.51 (.335) 8.76(.345) 7.54 (.297) 7.68 (.303) 6.02 (.237) 6.17 (.243) 0.330 (.013) 0.432 (.017) 0.000 (.000) 0.254 (.010) 2.62 (.103) 2.72 (.107) 1.22 (.048) 1.32 (.052) {3 Plcs.} 2.54 (.100) BSC {2 Plcs.} 3.68 (.145) 6.27 (.247) (Base of Lead) Heat Sink (Cathode) and Leads are Plated Anode Cathode 11-2008 053-6010 Rev K 0.762 (.030) 0.864 (.034) {2 Plcs.} Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.