NTE NTE21

NTE20 (NPN) & NTE21 (PNP)
Silicon Complementary Transistors
High Power, Low Collector Saturation Voltage
Power Output
Features:
D High Power in a Compact ATR Package: PO = 1W
Applications:
D Regulated Power Supplies
D 1 to 2W Output Stages
D Drivers
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Pulse
NTE20 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
NTE21 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0A
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +135°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +135°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA
32
–
–
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 50µA
40
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 50µA
5
–
–
V
Collector Cutoff Current
ICBO
VCB = 20V
–
–
1
µA
Emitter Cutoff Current
IEBO
VEB = 4V
–
–
1
µA
DC Current Gain
hFE
VCE = 3V, IC = 500mA
120
–
270
IC = 2A, IC = 200mA
–
500
–
mV
Collector Saturation Voltage
VCE(sat)
Transition Frequency
fT
VCE = 5V, IC = 500mA
–
100
–
MHz
Output Capacitance
Cob
VCB = 10V, f = 1MHz
–
50
–
pF
.102 (2.6)
.280 (7.11)
E
.100 (2.54)
.051 (1.29)
C
B
.185 (4.7)
.138 (3.5)
.022 (0.55)