NTE2501 (NPN) & NTE2502 (PNP) Silicon Complementary Transistors High Voltage for Video Output TO−126 Fully Isolated Type Package Features: D High Breakdown Voltage D Excellent High Frequency Characteristics Applications: D High Definition CRT Display D Color TV Chroma Output, High Breakdown Voltage Drivers Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Collector Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 200V, IE = 0 − − 0.1 A Emitter Cutoff Current IEBO VEB = 4V, IC = 0 − − 0.1 A DC Current Gain hFE VCE = 10V, IC = 10mA 100 − 200 fT VCE = 30V, IC = 10mA − 70 − Gain Bandwidth Product MHz Rev. 3−16 Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified) Parameter Symbol Output Capacitance NTE2501 Cob Test Conditions Min Typ Max Unit − 2.6 − pF − 3.1 − pF − 1.8 − pF − 2.3 − pF VCB = 30V, f = 1MHz NTE2502 Reverse Transfer Capacitance NTE2501 Cre VCB = 30V, f = 1MHz NTE2502 Collector−Emitter Saturation Voltage VCE(sat) IC = 20mA, IB = 2mA − − 600 mV Base−Emitter Saturation Voltage VBE(sat) IC = 20mA, IB = 2mA − − 1.0 V Collector−Base Breakdown Voltage V(BR)CBO IC = 10A, IE = 0 300 − − V Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = 300 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 10A, IC = 0 5 − − V .315 (8.0) .130 (3.3) .118 (3.0) Dia .433 (11.0) .295 (7.5) E C B .610 (15.5) .094 (2.4)