NTE2501 (NPN) & NTE2502 (PNP) Silicon Complementary Transistors High Voltage for Video Output Features: D High Breakdown Voltage D Excellent High Frequency Characteristics Applications: D High Definition CRT Display D Color TV Chroma Output, High Breakdown Voltage Drivers Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Collector Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 200V, IE = 0 – – 0.1 µA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 – – 0.1 µA DC Current Gain hFE VCE = 10V, IC = 10mA 100 – 200 fT VCE = 30V, IC = 10mA – 70 – Gain Bandwidth Product MHz Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Output Capacitance NTE2501 Cob Test Conditions Min Typ Max Unit – 2.6 – pF – 3.1 – pF – 1.8 – pF – 2.3 – pF VCB = 30V, f = 1MHz NTE2502 Reverse Transfer Capacitance NTE2501 Cre VCB = 30V, f = 1MHz NTE2502 Collector–Emitter Saturation Voltage VCE(sat) IC = 20mA, IB = 2mA – – 600 mV Base–Emitter Saturation Voltage VBE(sat) IC = 20mA, IB = 2mA – – 1.0 V Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 300 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 300 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 – – V .315 (8.0) .130 (3.3) .118 (3.0) Dia .433 (11.0) .295 (7.5) E C B .610 (15.5) .094 (2.4)