OPTEK JANTXV

Product Bulletin JANTX, JANTXV, 2N6989U
January 1996
Surface Mount Quad NPN Transistor
Type JANTX, JANTXV, 2N6989U
Features
Absolute Maximum Ratings (TA = 25o C unless otherwise noted)
• Ceramic surface mount package
• Hermetically sealed
• Small package minimizes circuit board
Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 V
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V
Emitter-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0 V
Collector Current-Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800 mA
Operating Junction Temperature(TJ) . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +200o C
Storage Junction Temperature (Tstg) . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +200o C
Power Dissipation (single transistor, no heat sink) . . . . . . . . . . . . . . . . . . . . . . . 0.5 W
Power Dissipation TA = 25o C (four devices driven equally) . . . . . . . . . . . . . . . 1.0 W(1)
Isolation Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 Vdc
Description
Notes:
(1) Derate linearly 8.57 mW/oC above 25o C.
area required
• Electrical performance similar to a
2N2222A
• Qualification per MIL-PRF-19500/559
The JANTX2N6989U is a hermetically
sealed, ceramic surface-mount device,
consisting of four individual silicon NPN
transistors. The 20 pin ceramic package
is ideal for designs where board space
and device weight are important design
considerations.
Typical screening and lot acceptance
tests are provided on page 13-4. The
burn-in condition is VCB = 30 V, PD = 250
mW each transistor, TA = 25o C. Refer
to MIL-PRF-19500/559 for complete
requirements.
When ordering parts without processing,
do not use a JAN prefix.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
15-20
(972)323-2200
Fax (972)323-2396
Type JANTX, JANTXV, 2N6989U
Electrical Characterics (TA = 25o C unless otherwise noted)
SYMBOL
Off Characteristics
PARAMETER
MIN MAX UNITS
TEST CONDITIONS
V(BR)CBO
Collector-Base Breakdown Voltage
75
V
IC = 10 µA
V(BR)CEO
Collector-Emitter Breakdown Voltage
50
V
IC = 10 mA(2)
V(BR)EBO
Emitter-Base Breakdown Voltage
6
V
IE = 10 µA
ICBO
Collector-Base Cutoff Current
10
nA
VCB = 60 V
ICBO2
Collector-Base Cutoff Current
10
µA
VCB = 60 V, TA = 150o C
IEBO
Emitter-Base Cutoff Current
10
nA
VEB = 4 V
On Characteristics
hFE1
Forward Current Transfer Ratio
50
VCE = 10 V, IC = 0.1 mA
hFE2
Forward Current Transfer Ratio
75
hFE3
Forward Current Transfer Ratio
100
hFE4
Forward Current Transfer Ratio
100
hFE5
Forward Current Transfer Ratio
30
VCE = 10 V, IC = 500 mA(2)
hFE6
Forward Current Transfer Ratio
35
VCE = 10 V, IC = 10 mA, TA = 55o C(2)
325
VCE = 10 V, IC = 1.0 mA
VCE = 10 V, IC = 10 mA(2)
VCE = 10 V, IC = 150 mA(2)
300
VCE(SAT)1
Collector-Emitter Saturation Voltage
0.3
V
IC = 150 mA, IB = 15 mA(2)
VCE(SAT)2
Collector-Emitter Saturation Voltage
1.0
V
IC = 500 mA, IB = 50 mA(2)
VCE(SAT)3
Collector-Emitter Saturation Voltage
0.45
V
IC = 150 mA, IB = 15 mA, TA = 150o C(2)
VBE(SAT)1
Base-Emitter Saturation Voltage
1.2
V
IC = 150 mA, IB = 15 mA(2)
VBE(SAT)2
Base-Emitter Saturation Voltage
2.0
V
IC = 500 mA, IB = 50 mA(2)
VBE(SAT)3
Base-Emitter Saturation Voltage
1.4
V
IC = 150 mA, IB = 15 mA, TA = 55o C(2)
0.6
Small-Signal Characteristics
hfe
hfe
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
2.5
Small-Signal Short Circuit Forward
Current Transfer Ratio
50
VCE = 10 V, IC = 20 mA, f = 100 MHz
8.0
VCE = 10 V, IC = 1 mA, f = 1kHz
Cobo
Open Circuit Output Capacitance
8
pF
VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1 MHz
Cibo
Input Capacitance
33
pF
VEB = 0.5 V, IC = 0, 100 kHz ≤ f ≤ 1 MHz
Switching Charateristics
ton
Turn-On Time
35
ns
VCC = 30 V, IC = 150 mA, IB = 15 mA
toff
Turn-Off Time
300
ns
VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA
MΩ
Vt-t = 500 V
Transistor to Transistor Isolation
Rt-t
Isolation Resistance
10k
(2) Pulsed Test: Pulse Width = 300 µs ±50, 1-2 % Duty Cycle.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
15-21
(972)323-2200
Fax (972)323-2396