Data Sheet No. 2N3735 Generic Part Number: 2N3735 Type 2N3735 Geometry TBD Polarity NPN Qual Level: Pending REF: MIL-PRF-19500/395 Features: • • • • General-purpose NPN silicon switching transistor which operates over a wide temperature range. Housed in a TO-39 case. Also it will be available in chip form using the TBD chip geometry. The Min and Max limits shown are per MIL-PRF-19500/395 which Semicoa meets in all cases. TO-39 Maximum Ratings TC = 25oC unless otherwise specified Rating Symbol Rating Unit Collector-Emitter Voltage VCEO 40 V Collector-Base Voltage VCBO 75 V Emitter-Base Voltage VEBO 5.0 V Collector Current, Continuous IC 1.5 mA Power, TA = +25oC PT 1.0 W Power, TC = +25oC PT 2.9 W Thermal Resistance RJC 0.060 Operating Junction Temperature TJ -55 to +200 TSTG -55 to +200 Storage Temperature o C/mW o C o C Data Sheet No. 2N3735 Electrical Characteristics o TC = 25 C unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 10 mA Collector-Emitter Breakdown Voltage IC = 10 µA Emitter-Base Breakdown Voltage IE = 10 µA Collector-Base Cutoff Current VCB = 30 V Emitter-Base Cutoff Current VEB = 4.0 V Collector-Emitter Cutoff Current VCE = 30 V, VEB = 2.0 V o VCB = 30 V, VEB = 2.0 V, TA = +150 C ON Characteristics Forward Current Transfer Ratio IC = 10 mA, VCE = 1.0 V IC = 150 mA, VCE = 1.0 V (pulse test) IC = 500 mA, VCE = 1.0 V (pulse test) IC = 1.0 A, VCE = 1.5 V (pulse test) IC = 1.5 A, VCE = 5.0 V (pulse test) IC = 500 mA, VCE = 1.0 V (pulsed), TA = +150oC Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 150 mA, IB = 15 mA (pulse test) IC = 500 mA, IB = 50 mA (pulse test) IC = 1.0 A, IB = 100 mA (pulse test) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 150 mA, IB = 15 mA (pulse test) IC = 500 mA, IB = 50 mA (pulse test) IC = 1.0 A, IB = 100 mA (pulse test) Small Signal Characteristics Forward Current Transfer Ratio IC = 50 mA, VCE = 10 V, f = 100 MHz Open Circuit Output Capacitance VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz Input Capacitance, Output Open Circuited VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz Delay Time VCC = 30 V, VBE = 2 V, IC = 1 A, IB1 = 100 mA Rise Time VCC = 30 V, VBE = 2 V, IC = 1 A, IB1 = 100 mA Turn-off Time VCC = 30 V, VBE = 2 V, IC = 1 A, IB1 = IB2 = 100 mA Symbol Min Max Unit V(BR)CBO 40 --- V V(BR)CEO 75 --- V V(BR)EBO 5.0 --- V ICBO1 --- 250 nA IEBO1 --- 100 nA ICEX1 --- 200 nA ICEX2 --- 250 µA Symbol Min Max Unit hFE1 hFE2 hFE3 hFE4 hFE5 30 40 40 20 20 ----140 80 --- ----------- hFE6 15 --- --- VCE(sat)1 VCE(sat)2 VCE(sat)3 VCE(sat)4 --------- 0.2 0.3 0.9 0.30 V dc V dc V dc V dc VBE(sat)1 VBE(sat)2 VBE(sat)3 VBE(sat)4 ------0.9 0.8 1.0 1.2 1.4 V dc V dc V dc V dc Symbol Min Max Unit |hFE| 2.5 6.0 --- COBO --- 9.0 pF CIBO --- 80 pF td --- 8.0 ns tr --- 40 ns toff --- 60 ns