SEME-LAB 2N2907AQ

2N2907AQ–LCC20
MECHANICAL DATA
Dimensions in mm (inches)
SURFACE MOUNT
QUAD PNP TRANSISTOR
5 .0 8 (.2 0 0 )
1 .2 7 (.0 5 0 )
R E F
1 .2 7 (.0 5 0 )
R E F
5 .0 8 (.2 0 0 )
FEATURES
P IN 1
IN D E X
1
1 .9 1 (.0 7 5 )
• FOUR INDEPENDENT TRANSISTORS IN A
0.35 INCH SQUARE CERAMIC PACKAGE
0 .6 4 (.0 2 5 )
R E F
1 .9 1 (.0 7 5 )
1 .6 0 (.0 6 3 )
2 .1 6 (.0 8 5 )
1 8
• SURFACE MOUNTABLE
• HERMETICALLY SEALED PACKAGE
• SCREENING OPTIONS AVAILABLE
1 4
1 3
2 0
DESCRIPTION
1
9
4
The 2N2907AQ–LCC20 is a 20 pad,
hermetically sealed, Ceramic Surface Mount
Transistor array, consisting of four 2N2907A
silicon PNP transistor die.
8
8 .8 9 (.3 5 0 )
S Q
PACKAGE LCC20
Pin 1 = n/c
Pin 6 = n/c
Pin 11 = n/c
Pin 2 = Collector1
Pin 7 = Emitter 2
Pin12 =Collector 3 Pin 17 = Emitter 4
Pin 3 = n/c
Pin 8 = Base 2
Pin13 = n/c
Pin 18 = Base 4
Pin 4 = Base 1
Pin 9 = n/c
Pin 14 = Base 3
Pin 19 = n/c
Pin 5 = Emitter 1
Pin10 =Collector 2 Pin 15 = Emitter 3
Pin 16 = n/c
Pin 20 =Collector 4
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
IV
PD
PD
TJ , TSTG
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current
Isolation Voltage
Total Device Dissipation @ TA = 25°C (four devices driven equally)
Total Device Dissipation@ TS(1) = 25°C (four devices driven equally)
Operating and Storage Junction Temperature Range
Soldering Temperature (vapor phase reflow for 30 sec)
Soldering Temperaure (heated collect for 5 sec)
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
60V
60V
5V
600mA
500VDC
1W
2W(2)
–65 to +200°C
215°C
260°C
Prelim.6/99
2N2907AQ–LCC20
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max. Unit
V(BR)CEO
OFF CHARACTERISTICS
Collector – Emitter Sustaining Voltage
IC = 10mA
IB = 0
60
V
V(BR)CBO
Collector – Base Breakdown Voltage
IC = 10mA
IE = 0
60
V
V(BR)EBO
Emitter – Base Breakdown Voltage
IE = 10mA
IC = 0
5
V
ICBO
Collector – Base Cut-off Current
IE = 0
VCB = 50V
10
nA
TA = 150°C
10
m
IEBO
Emitter Base Cut-off Current
IC = 0
VEB = 3.5V
50
nA
IC = 150mA
IB = 15mA(3)
0.4
V
IC = 500mA
IB = 50mA(3)
1.60
IC = 150mA
IB = 15mA(3)
1.3
IC = 500mA
IC = 50mA(3)
2.6
IC = 0.1mA
VCE = 10V
75
IC = 1mA
VCE = 10V
100
IC = 10mA
VCE = 10V
100
IC = 150mA(3) VCE = 10V
100
IC = 500mA(3) VCE = 10V
50
A
ON CHARACTERISTICS
VCE(sat)
Collector – Emitter Saturation Voltage
VBE(sat)
Base – Emitter Saturation Voltage
hFE
Forwared Current Transfer Ratio
IC = 10mA
VCE = 10V
TA = –55°C
V
450
300
—
50
SMALL SIGNAL CHARACTERISTICS
hfe
Forward Current Transfer Ratio
IC = 1mA
VCE = 10V f = 1kHz
lhfel
Forward Curent Transfer Ratio
IC = 50mA VCE = 20V f = 100MHz
100
—
2
Cobo Open Circuit Output Capacitance VCB = 10V 100kHz £ f £ 1MHz
8
Cibo
30
Input Capacitance(output open)
VEB = 2V
100kHz £ f £ 1MHz
pF
—
SWITCHING CHARACTERISTICS
ton
Turn-On Time
VCC = 30V IC 150mA
IB1 = 15mA
45
toff
Turn-Off Time
VCC = 30V IC 150mA
IB1 = IB1=15mA
300
ns
NOTES:
1) Ts = Substrate Temperatue that the chip carrier is mounted on.
2) Derate Linearly 11.4mW/°C above 25°C. This rating is proveded as an aid to designers. It is dependent upon
mounting material and methods and is not measureable as an outgoing test.
3) Pulse Test Pulse Wide £ 300ms , Duty Cycle
Semelab plc.
£
2%
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim.6/99