POLYFET ST724

polyfet rf devices
ST724
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
60.0 Watts Single Ended
Package Style AT
TM
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
input impedance and high efficiency.
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
190 Watts
o
0.85 C/W
Maximum
Junction
Temperature
o
200 C
DC Drain
Current
Storage
Temperature
o
o
-65 C to 150 C
RF CHARACTERISTICS (
SYMBOL
Gps
η
VSWR
PARAMETER
MIN
Common Source Power Gain
TYP
19.0 A
MAX
75
Load Mismatch Tolerance
Drain to
Source
Voltage
Gate to
Source
Voltage
50 V
50 V
20 V
60.0 WATTS OUTPUT )
10
Drain Efficiency
Drain to
Gate
Voltage
20:1
UNITS
TEST CONDITIONS
dB
Idq = 0.80 A, Vds = 12.5 V, F =
175 MHz
%
Idq = 0.80 A, Vds = 12.5 V, F =
175 MHz
Relative Idq = 0.80 A, Vds = 12.5 V, F = 175 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
V
40
TEST CONDITIONS
Bvdss
Drain Breakdown Voltage
Idss
Zero Bias Drain Current
4.0
mA
Vds = 12.5 V, Vgs = 0V
Igss
Gate Leakage Current
1
uA
Vds = 0V Vgs = 30V
Vgs
Gate Bias for Drain Current
7
V
Ids = 0.40 A, Vgs = Vds
gM
Forward Transconductance
Rdson
Saturation Resistance
Idsat
1
Ids = 80.00 mA, Vgs = 0V
5.2
Mho
Vds = 10V, Vgs = 5V
0.20
Ohm
Vgs = 20V, Ids =10.00 A
Saturation Current
38.00
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitance
180.0
pF
Vds = 12.5 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
14.0
pF
Vds = 12.5 Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitance
220.0
pF
Vds = 12.5 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 03/28/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
ST724
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
ST724 POUT VS PIN Freq=175MHz,
S1C 4 DIE CAPACITANCE
1000
VDS=12.5V, Idq=.8A
80
14.00
70
Coss
13.00
60
12.00
Pout
50
Ciss
100
40
11.00
30
Crss
10.00
Efficiency = 75%
20
Gain
9.00
10
0
10
8.00
0
2
4
6
8
0
10
2.5
5
IV CURVE
10
12.5
15
ID & GM VS VGS
S1C 4 DIE ID & GM Vs VG
S1C 4 DIE IV
100.00
Id in amps; Gm in mhos
50
45
40
35
ID IN AMPS
7.5
V D S I N V O L T S
PIN IN WATTS
30
25
20
15
10
5
Id
10.00
gM
1.00
0.10
0
0
2
vg=2v
4
6
Vg=4v
8
10
12
VDS IN VOLTS
Vg=6v
14
16
vg=8v
18
20
0
0
Zin Zout
2
4
6
8
10
Vgs in Volts
12
14
16
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
POLYFET RF DEVICES
.XXX +/-.005 inches
REVISION 03/28/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com