polyfet rf devices ST724 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 60.0 Watts Single Ended Package Style AT TM "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation Junction to Case Thermal Resistance 190 Watts o 0.85 C/W Maximum Junction Temperature o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C RF CHARACTERISTICS ( SYMBOL Gps η VSWR PARAMETER MIN Common Source Power Gain TYP 19.0 A MAX 75 Load Mismatch Tolerance Drain to Source Voltage Gate to Source Voltage 50 V 50 V 20 V 60.0 WATTS OUTPUT ) 10 Drain Efficiency Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 0.80 A, Vds = 12.5 V, F = 175 MHz % Idq = 0.80 A, Vds = 12.5 V, F = 175 MHz Relative Idq = 0.80 A, Vds = 12.5 V, F = 175 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS V 40 TEST CONDITIONS Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 4.0 mA Vds = 12.5 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 7 V Ids = 0.40 A, Vgs = Vds gM Forward Transconductance Rdson Saturation Resistance Idsat 1 Ids = 80.00 mA, Vgs = 0V 5.2 Mho Vds = 10V, Vgs = 5V 0.20 Ohm Vgs = 20V, Ids =10.00 A Saturation Current 38.00 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitance 180.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 14.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 220.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 03/28/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com ST724 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE ST724 POUT VS PIN Freq=175MHz, S1C 4 DIE CAPACITANCE 1000 VDS=12.5V, Idq=.8A 80 14.00 70 Coss 13.00 60 12.00 Pout 50 Ciss 100 40 11.00 30 Crss 10.00 Efficiency = 75% 20 Gain 9.00 10 0 10 8.00 0 2 4 6 8 0 10 2.5 5 IV CURVE 10 12.5 15 ID & GM VS VGS S1C 4 DIE ID & GM Vs VG S1C 4 DIE IV 100.00 Id in amps; Gm in mhos 50 45 40 35 ID IN AMPS 7.5 V D S I N V O L T S PIN IN WATTS 30 25 20 15 10 5 Id 10.00 gM 1.00 0.10 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 VDS IN VOLTS Vg=6v 14 16 vg=8v 18 20 0 0 Zin Zout 2 4 6 8 10 Vgs in Volts 12 14 16 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 03/28/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com