Three Phase Rectifier Bridges PSD 162 IdAV VRRM = 175 A = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 162/08 PSD 162/12 PSD 162/14 PSD 162/16 PSD 162/18 Symbol Test Conditions IdAV IFSM TC = 90°C, module ∫ i2 dt TVJ TVJM Tstg VISOL Md Weight ~ ~ ~ Maximum Ratings 175 A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1800 1950 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1600 1800 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 16200 16200 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 12800 13400 A2 s A2 s -40 ... + 150 150 -40 ... + 125 °C °C °C 2500 3000 V∼ V∼ Nm Nm g 50/60 HZ, RMS t = 1 min t=1s IISOL ≤ 1 mA Mounting torque Terminal connection torque typ. (M6) (M6) 5 5 270 Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered E 148688 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394“) Symbol Test Conditions Characteristic Value IR VR = VRRM VR = VRRM TVJ = 25°C TVJ = TVJM ≤ ≤ 0.3 5 mA mA VF VTO rT RthJC IF = 300 A TVJ = 25°C ≤ 1.55 V 0.8 3 V per diode; DC current per module 0.65 0.108 mΩ K/W K/W RthJK per diode; DC current per module 0.83 0.138 K/W K/W dS Creeping distance on surface 10.0 mm dA a Creeping distance in air Max. allowable acceleration 9.4 50 mm m/s2 For power-loss calculations only TVJ = TVJM POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions PSD 162 IF(OV) -----IFSM 200 5 10 2 As IFSM (A) [A] TVJ=45°C TVJ=150°C 1800 1.6 1600 150 1.4 10 1.2 100 TVJ=45°C 4 TVJ=150°C 1 0 VRRM 50 0.8 1/2 VRRM Tvj = 150°C IF 0.6 Tvj = 25°C 0 0.5 1 1.5 VF [V] 10 0.4 2 0 1 10 Fig. 1 Forward current versus voltage drop per diode 600 [W] 1 VRRM 10 t[ms] 2 3 1 2 3 10 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 4 t [ms] 6 10 Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor) 70 TC 75 PSD 162 0.08 0.04 500 = RTHCA [K/W] 0.12 80 85 90 200 DC [A] sin.180° 95 400 100 0.2 rec.120° rec.60° 150 105 110 300 115 0.37 200 DC sin.180° rec.120° rec.60° rec.30° 100 PVTOT 0 120 125 125 100 75 130 0.87 135 140 145 °C 150 25 75 IFAVM rec.30° 125 175 0 [A] Tamb 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature 50 25 IdAV 0 50 100 150 200 TC(°C) Fig.5 Maximum forward current at case temperature 1 K/W Z thJK 0.8 Z thJC 0.6 0.4 0.2 Z th 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions