VBO 50 IdAVM = 50 A VRRM = 800-1800 V Single Phase Rectifier Bridge VRSM VRRM V V 800 1200 1400 1600 1800 800 1200 1400 1600 1800 VBO VBO VBO VBO VBO + + Type - ~ ~ 50-08NO7 50-12NO7 50-14NO7 50-16NO7 50-18NO7* – ~ ~ * delivery time on request Symbol Conditions IdAVM TC = 64°C, module IFSM TVJ = 45°C; VR = 0 I2t Maximum Ratings 50 A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 750 820 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 670 740 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2800 2820 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2250 2300 A2s A2s -40...+150 150 -40...+150 °C °C °C 2500 3000 V~ V~ ±15% ±15% ±15% ±15% 260 Nm lb.in. Nm lb.in. g TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Md Mounting torque (M5) 5 44 3 26 Terminal connection torque (M5) Weight typ. Symbol Conditions IR VR = VRRM; VR = VRRM; TVJ = 25°C TVJ = TVJM ≤ ≤ 0.3 10.0 mA mA VF IF TVJ = 25°C ≤ 1.6 V VT0 rT For power-loss calculations only TVJ = TVJM 0.85 8 V mΩ RthJC per per per per 2.6 0.65 2.84 0.71 K/W K/W K/W K/W RthJK = 150 A; Features • Package with screw terminals • Isolation voltage 3000 V~ • Planar passivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered E 72873 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") Characteristic Values diode; DC current module diode; DC current module IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 420 Data according to IEC 60747 refer to a single diode unless otherwise stated. 1-2 VBO 50 200 [A] IF(OV) -----IFSM 1:TVJ= 150°C 2:TVJ= 25°C 4 10 2 As IFSM (A) TVJ=45°C TVJ=150°C 750 1.6 670 150 TVJ=45°C 1.4 1.2 10 100 3 TVJ=150°C 1 0 V RRM 0.8 50 1/2 VRRM 0.6 IF 2 10 0.4 0 0.5 1 1.5 VF[V] 2 2.5 Fig. 1 Forward current versus voltage drop per diode 100 [W] 1 V RRM 1 10 0 10 1 t[ms] 10 2 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 85 TC PSB 55 0.6 0.35 = RTHCA [K/W] 2 1 4 t [ms] 70 [A] 105 60 10 DC sin.180° rec.120° re c.60° .30° 90 100 1.35 6 Fig. 3 ∫i2dt versus time (1-10ms) per diode or thyristor 95 0.85 80 2 3 50 110 115 120 30 2.35 40 DC sin.180° rec.120° rec.60° rec.30° 20 PVTOT 0 125 130 135 5.35 140 145 °C 150 10 IFAVM 30 10 IdAV 0 [A] 50 100 Tamb 150 [K] Fig. 4 Power dissipation versus direct output current and ambient temperature 0 50 100 150 200 TC(°C) Fig.5 Maximum forward current at case temperature 4 K/W Z thJK Z thJC 3 2 1 Z th 0.01 0.1 t[s] 1 10 IXYS reserves the right to change limits, test conditions and dimensions. 2-2 420 Fig. 6 Transient thermal impedance per diode or thyristor, calculated © 2004 IXYS All rights reserved