Three Phase Rectifier Bridge TM (TRACTION - PAC ) PSTD 82 IdAV VRRM = 88 A = 800-1800V Preliminary Data Sheet VRSM VDSM (V) 800 1200 1400 1600 1800 VRRM VDRM (V) 800 1200 1400 1600 1800 Symbol IdAVM IFSM ∫ i2 dt TVJ TVJM Tstg VISOL Type PSTD PSTD PSTD PSTD PSTD 82/08 82/12 82/14 82/16 82/18 Features • Test Conditions Maximum Ratings • • TC = 110 °C, (per module) 88 A • • TVJ = 45 °C t = 10 ms (50 Hz), sine 750 A VR = 0 t = 8.3 ms (60 Hz), sine 820 A TVJ = TVJM t = 10 ms (50 Hz), sine 670 A VR = 0 t = 8.3 ms (60 Hz), sine 740 A TVJ = 45 °C t = 10 ms (50 Hz), sine 2800 A²s VR = 0 t = 8.3 ms (60 Hz), sine 2800 A²s TVJ = TVJM t = 10 ms (50 Hz), sine 2250 A²s Advantages VR = 0 t = 8.3 ms (60 Hz), sine 2250 A²s -40... + 150 150 °C °C • • • -40... + 125 °C 50/60 Hz, RMS t = 1 min 2500 IISOL ≤ 1 mA 3000 t=1s V∼ V∼ Md Mounting torque (M5) 5.0/44 Nm/lb.in. Weight Terminal connection torque (M5) typ. 3.0/26 Nm/lb.in. 170 g Symbol Test Conditions IR VR = VRRM, TVJ = 25°C ≤ 0.3 mA VR = VRRM, TVJ = TVJM ≤ 5 mA IF = 150 A, ≤ 1.6 V VF VTO rT RthJC RthJK ds dA a Package with screw terminals Isolation voltage 3000 V∼ Planar glass passivated chips Blocking voltage up to 1800 V Low forward voltage drop TVJ = 25 °C Applications • • • • Supplies for DC power equipment Input rectifier for PWM inverter Battery DC power supplies Field supply for DC motors Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability Package style and outline Dimensions in mm (1mm = 0.0394“) Characteristic Value For power-loss calculations only 0.8 V 5 mΩ per diode; DC current per module per diode; DC current 1.1 0.183 1.52 K/W K/W K/W per module 0.253 K/W 10.0 9.4 50 mm mm m/s² Creeping distance on surface Creeping distance in air Max. allowable acceleration Data according to IEC 60747 refer to a single diode unless otherwise stated 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSTD 82 Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor) PSTD 82 Fig. 4 Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current at case temperature Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 2005 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20