1N4001 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 1N4007 SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES * * * * Low cost Low leakage Low forward voltage drop High current capability DO-41 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.33 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) SYMBOL 1N4001 1N4002 1N4003 1N4006 1N4007 UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage V RMS 35 70 140 280 420 560 700 Volts VDC 50 100 200 400 600 800 1000 RATINGS Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TA = 75 oC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note) Typical Thermal Resistance Operating and Storage Temperature Range 1N4004 1N4005 Volts IO 1.0 Amps I FSM 30 Amps CJ 15 R θJA T J , T STG 50 -65 to + 175 pF 0 C/ W 0 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Instantaneous Forward Voltage at 1.0A DC Maximum DC Reverse Current @T A = 25 o C at Rated DC Blocking Voltage @T A = 100 oC Maximum Full Load Reverse Current Average, Full Cycle o .375” (9.5mm) lead length at T L = 75 C NOTES : Measured at 1 MHZ and applied reverse voltage of 4.0 volts SYMBOL VF IR 1N4001 1N4002 1N4003 1N4004 1.1 5.0 50 30 1N4005 1N4006 1N4007 UNITS Volts uAmps uAmps 1998-8 Back RECTRON