MPSA06 TECHNICAL SPECIFICATION Plastic Package Transistors (NPN) Dimensions Absolute Maximun Ratings (Ta=25oC) Items Symbol VCBO Ratings Unit 80 V Collector - Emitter VCEO 80 V Emitter - Base V EBO 4 V Power Dissipation PD 625 mW Collector Current IC 500 mA Junction to Case Rth (JC) 83.3 °C/W Rth (JA) (1) 200 ° C/W Collector - Base Junction to Ambient TO- 92 (1) Device soldered to a typical PCB Pin Configuration Code Style TO - 92 Pin 1 Collector Pin 2 Base Pin 3 Emitter D IM M IN M AX A 4 .3 2 5 .3 3 B 4 .4 5 5 .2 C 3 .1 8 4 .1 9 D 0 .4 1 0 .5 0 E 0 .3 5 0 .5 0 F 5 q 5 q G 1 .1 4 1 .4 0 H 1 .1 4 1 .5 3 K 1 2 .7 0 - All dimensions in mm Electrical Characteristics (Ta=25oC) Description Symbol Test Conditions Collector - Emitter Breakdown Voltage VCEO IC = 1mA, IB = 0 Emitter - Base Voltage VEBO IE = 100uA, IC = 0 ICEO V CE = 60V, IB = 0 ICBO V CB = 80V, IE = 0 Collector - Cut off Current DC Current Gain hFE IC = 10mA, VCE = 1V IC = 100mA, VCE = 1V Min Typ Max Units 80 V 4 V 0.1 0.1 µA µA 100 100 Collector Emitter (sat) Voltage VCE (sat) IC = 100mA, IB = 10mA 0.25 V Base Emitter (on) Voltage VBE (on) IC = 100mA, VCE = 1V 1.2 V fT IC = 10mA V CE = 2V f = 100 MHz Dynamic Characteristics (Ta=25oC) Current gain Bandwidth Product 100 MHz