TIGER ELECTRONIC CO.,LTD Product specification BD681/BD682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The BD681, are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-126 plastic package. They are intended for use in medium power linar and switching applications The complementary PNP types are BD682, respectively. O ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Symbol Value Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current IC 4.0 A Base Current IB 0.1 A Ptot 40 W Tj 150 o Tstg -55~150 o Total Dissipation at Max. Operating Junction Temperature Storage Temperature C C O ELECTRICAL CHARACTERISTICS ( Ta = 25 C) R Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICEO VCE=100V, IB=0 — — 0.2 mA Collector Cut-off Current ICBO VCB=100V, IE=0 — — 0.5 mA Emitter Cut-off Current IEBO VEB=5V, IC=0 — — 2.0 mA Collector-Emitter Sustaining Voltage VCEO IC=50mA, IB=0 100 — — V DC Current Gain hFE(1) VCE=3V, IC=1.5A 750 — — — — 2.5 V — — 2.5 V Collector-Emitter Saturation Voltage Base-Emitter Voltage VCE(sat) IC=1.5A,IB=30mA VBE VCE=3V,IC=1.5A