JMnic Product Specification 2SA900 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC1568 ・Low collector saturation voltage APPLICATIONS ・For audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute Maximun Ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -20 V VCEO Collector-emitter voltage Open base -18 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -1 A ICM Collector current-peak -2 A PC Collector power dissipation 1.2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA900 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA;IB=0 -18 V V(BR)CBO Collector-base breakdown voltage IC=-10μA ;IE=0 -20 V V(BR)EBO Emitter-base breakdown voltage IE=-10μA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-50mA -0.5 V VBEsat Base-emitter saturation voltage IC=-500mA ;IB=-50mA -1.2 V ICBO Collector cut-off current VCB=-10V; IE=0 -1 μA ICEO Collector cut-off current VCE=-18V; IB=0 -10 μA hFE-1 DC current gain IC=-500mA ; VCE=-2V 90 hFE-2 DC current gain IC=-1.5A ; VCE=-2V 50 COB Output capacitance IE=0 ; VCB=-6V;f=1MHz 40 pF fT Transition frequency IE=50mA ; VCB=-6V 200 MHz CONDITIONS hFE-1 Classifications Q R S T U 90-155 130-210 180-280 250-360 330-470 2 MIN TYP. MAX UNIT 470 JMnic Product Specification 2SA900 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3