RECTRON SR760CSDP SEMICONDUCTOR TECHNICAL SPECIFICATION SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE 60 Volts CURRENT 7.0 Amperes FEATURES * * * * * * * Fast switching Low switching noise Low forward voltage drop High current capability High switching capability High reliability High surge capability .265 (6.73) .250 (6.35) .094 (2.36) .086 (2.19) .023 (0.58) .018(0.46) TYP.043(1.10) 1 K TYP.020 (0.50) 2 .370 (9.40) Case: Molded plastic Epoxy: Device hasUL flammability classification 94V-O Lead: MIL-STD-202E method 208C guaranteed Metallurgically bonded construction Mounting position: Any .245 (6.22) .234 (5.95) TYP.055 (1.40) .045 (1.14) .025 (0.60) .181 (4.60) .035 (0.89) .022 (0.56) .050 (1.27) .030 (0.76) PIN 1 PIN 2 MIN.020 (0.51) * * * * * .410 (10.42) MECHANICAL DATA .023 (0.58) .018 (0.46) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At T A = 25oC unless otherwise noted) SYMBOL RATINGS UNITS Maximum Recurrent Peak Reverse Voltage VRRM SR760CSDP 60 Maximum RMS Voltage VRMS 42 Volts VDC 60 Volts IO 7.0 Amps I FSM 80 Amps 200 pF Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at Derating Lead Temperature Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range T STG -55 to + 150 -55 to + 150 Volts 0 C 0 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) SYMBOL SR760CSDP UNITS Maximum Instantaneous Forward Voltage at 3.0A DC VF .61 Volts Maximum Instantaneous Forward Voltage at 6.0A DC VF .76 Volts 2.0 mAmps 20 mAmps CHARACTERISTICS Maximum Average Reverse Current @T A = 25 o C at Rated DC Blocking Voltage @T A = 100o C Note: 1. Measured at 1 MHz and applied reverse voltage of 4.0 volts. 2 “Fully ROHS compliant”, “100% Sn plating (Pb-free)”. IR 2006-6 RATING AND CHARACTERISTIC CURVES ( SR760CSDP ) FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE 5.0 Single Phase Half Wave 60Hz Resistive of Inductive Load 0.375" (9.5mm) Lead Length 4.0 3.0 2.0 50 75 100 125 LEAD TEMPERATURE, ( ) TJ = 75 .1 TJ = 25 .01 0 20 40 60 80 100 120 1.0 .1 .3 .4 .5 .6 .7 .8 .9 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 4 - TYPICAL JUNCTION CAPACITANCE 500 TJ = 25 200 100 50 20 10 5 .1 .2 .5 1 2 5 10 20 REVERSE VOLTAGE, (V) FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 80 70 TL = 75 8.3ms Single Half Sine-Wave (JEDEC Method) 60 50 40 30 20 10 1 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) TJ = 25 Pulse Width = 300uS 1% Duty Cycle .2 TJ = 125 1.0 150 FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 20 10 10 .001 25 JUNCTION CAPACITANCE, (pF) INSTANTANEOUS FORWARD CURRENT, (A) 1.0 0 FIG. 2 - TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, (mA) 6.0 PEAK FORWARD SURGE CURRENT, (A) AVERAGE FORWARD CURRENT, (A) 7.0 2 5 10 20 50 NUMBER OF CYCLE AT 60Hz 100 RECTRON 40