SGA-9089Z SGA-9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from 50MHz to 4.0GHz. The SGA-9089Z is optimized for 3V operation. The device provides excellent linearity at a low cost. It can be operated over a wide range of currents depending on the power and linearity requirements. P1dB =+23.8dBm at 2.44GHz OIP3 =+37.5dBm at 2.44GHz Optimum Technology Matching® Applied Typical GMAX, OIP3, P1dB GaAs HBT VCE = 3.0V, ICE = 170mA 24.0 InGaP HBT SiGe BiCMOS 20.0 GMAX (dB) 9 38 OIP3 Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT 35 32 16.0 29 14.0 26 18.0 GMAX 12.0 GaN HEMT 10.0 InP HBT 23 P1dB 3.1dB NF at 2.44GHz Low Cost, High Performance, Versatility Applications 41 GaAs MESFET 22.0 0.05GHz to 4GHz Operation 15.0dB GMAX at 2.44GHz Analog and Digital Wireless Systems 3G, Cellular, PCS, RFID Fixed Wireless, Pager Systems PA Stage for Medium Power Applications 20 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 Frequency (GHz) RF MEMS LDMOS Parameter Min. Maximum Available Gain, ZS =ZS*, ZL =ZL* Output Power at 1dB Compression[2], ZS =ZSOPT, ZL =ZLOPT Output Third Order Intercept Point, ZS =ZSOPT, ZL =ZLOPT Power Gain, ZS =ZSOPT, ZL =ZLOPT Noise Figure[2], ZS =ZSOPT, ZL =ZLOPT Specification Typ. Max. Unit Condition 23.2 dB 880MHz 16.4 15.0 23.7 dB dB dBm 1960MHz 2440MHz 880MHz and 1960MHz 23.8 37.4 dBm dBm 2440MHz 880MHz 37.5 18.0 dBm dB 880MHZ[1] 13.0 dB 1960MHz[2] 11.0 dB 1960MHz and 2440MHz 3.2 dB 2440MHz[2] 880MHz 3.1 3.1 180 48 6.0 dB dB 1960MHz 2440MHz DC Current Gain 100 300 Thermal Resistance °C/W Junction - lead Breakdown Voltage 5.7 V Collector - Emitter Device Operating Voltage 3.8 V Collector - Emitter Device Operating Current 220 mA Collector - Emitter Test Conditions:VCE =3V, ICE =170mA Typ. (unless otherwise noted), TL =25°C OIP3 Tone Spacing=1MHz, POUT per tone=10dBm [1] 100% production tested with Application Circuit [2] Data with Application Circuit RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. EDS-105051 Rev F 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 6 SGA-9089Z Absolute Maximum Ratings Parameter Rating Unit Device Current (ICE) 235 mA Base Current (IB) 2.5 mA Device Voltage (VCE) 4.5 V Collector - Base Voltage (VCB) 12 V Emitter - Base Voltage (VEB) 4.5 V RF Input Power* (See Note) Operating Temp Range (TL) RoHS status based on EUDirective2002/95/EC (at time of this document revision). 24 dBm +150 °C See Graph °C +150 °C Junction Temp (TJ) Storage Temp ESD Rating - Human Body Model (HBM) Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Class 1C Moisture Sensitivity Level MSL 2 *Note: Load condition ZL =50Ω Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l and TL =TLEAD Maximum Recommended Operational Dissipated Power Total Dissipated Power (W) 1.2 1.0 0.8 0.6 0.4 0.2 Operational Limit (Tj<130°C) 0.0 -40.0 -10.0 20.0 50.0 80.0 110.0 140.0 Lead Temperature (°C) Typical Performance with 2.45GHz Application Circuit Freq (MHz) VCE (v) 880 3.0 2440 3.0 Test Conditions:VS =5V 2 of 6 ICE (mA) P1dB (dBm) OIP3 (dBm) Gain (dB) S11 (dB) S22 (dB) NF (dB) 170.0 23.7 37.4 18.0 -18.6 -18.7 3.2 170.0 23.8 37.5 11.0 -18.7 -23.9 3.1 IS =180mA Typ. OIP3 Tone Spacing=1MHz, POUT per tone=10dBm TL =25°C 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. ZSOPT (Ω) ZLOPT (Ω) 15 - j5.9 11.8 - j27.6 14.2 - j2.8 16.4 - j14.2 EDS-105051 Rev F SGA-9089Z 0 400.0 35.0 -5 350.0 30.0 -10 40.0 300.0 GMAX 25.0 -15 Isolation 20.0 250.0 -20 15.0 -25 10.0 -30 5.0 -35 0.0 -40 IC (mA) Gain, GMAX (dB) DCIV Curves Insertion Gain and Isolation (ICE = 170mA) 200.0 150.0 100.0 Gain -5.0 -45 -10.0 -50 0.0 2.0 4.0 6.0 8.0 10.0 50.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE (Volts) Frequency (GHz) S11 versus Frequency S22 versus Frequency S11 Vs. Frequency S22 Vs. Frequency 3.5 GHz 2.44 GHz 5 GHz 3.5 GHz 5 GHz 1.96 GHz 6 GHz 2.44 GHz 1.96 GHz 6 GHz .88 GHz 8 GHz .88 GHz .5 GHz .5 GHz .2 GHz .2 GHz .1 GHz 8 GHz .1 GHz 10 GHz .05 GHz .05 GHz 10 GHz Note: S-parameters are de-embedded to the device leads with ZS=ZL=50Ω. De-embedded S-parameters can be downloaded from our website (www.rfmd.com) EDS-105051 Rev F 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 6 SGA-9089Z Pin 1 2, 4 3 Function RF IN GND RF OUT Description RF input / Base Bias. External DC blocking capacitor required. Connection to ground. Use via holes to reduce lead inductance. Place via holes as close to lead as possible. RF Out / Collector bias. External DC blocking capacitor required. Suggested Pad Layout Preliminary Package Drawing Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. Pi D 4 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. i ti EDS-105051 Rev F SGA-9089Z Part Identification 4 2 3 1 1 2 A90Z 3 Alternate marking “SGA9089Z” on line one with Trace Code on line two. Ordering Information EDS-105051 Rev F Part Number Reel Size Devices/Reel SGA-9089Z 7” 1000 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 6 SGA-9089Z 6 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. EDS-105051 Rev F