SANKEN EKV550

50V N-ch MOSFET
EKV550
January. 2006
■Features
■Package—TO-220
• Low on-resistance
• Avalanche energy capability guaranteed
• Built-in Gate protection diode against electrostatic
discharge (ESD)
■Applications
• DC-DC Converters
• High speed switching
■Equivalent circuit
D (2)
G (1)
S (3)
Absolute maximum ratings
(Ta=25°C）
Parameter
Symbol
Rating
Unit
Drain to Source Voltage
VDSS
50
V
Gate to Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
±50A
A
Pulsed Drain Current
ID(pulse) 1)
±150A
A
Maximum Power Dissipation
PD
85 (Tc=25°C)
W
Single Pulse Avalanche Energy
EAS 2)
150
mJ
Avalanche Current
IAS
20
A
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
-55 to 150
°C
1) PW≤100μs, duty cycle≤1%
2) VDD=20V,L=72μH, ILp=50A, unclamped, RG=50Ω. See Fig.1
.
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T02-005JA-060111
50V N-ch MOSFET
EKV550
January. 2006
Electrical characteristics
(Ta=25°C）
Unit
Symbol
Drain to Source breakdown Voltage
V(BR)DSS
Gate to Source Leakage Current
IGSS
VGS=±20V
±10
μA
Drain to Source Leakage Current
IDSS
VDS=50V, VGS=0V
100
μA
Gate Threshold Voltage
VTH
VDS=10V, ID=250μA
3.0
4.2
V
Forward Transconductance
Re(Yfs)
VDS=10V, ID=25A
17
Static Drain to Source On-Resistance
RDS(on)
ID=25A, VGS=10V
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Diode Forward Voltage
VSD
Test Conditions
Limits
Parameter
ID=100μA,VGS=0V
VDS=10V
VGS=0V
f=1MHz
MIN.
TYP.
MAX.
250
V
S
12
15
mΩ
2000
pF
1200
500
30
ID=25A, VDD≈25V
RL=1Ω, VGS=10V
360
RG=10Ω
130
ns
See Fig.2
120
ISD=50A,VGS=0V
1.0
1.5
V
.
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50V N-ch MOSFET
EKV550
January. 2006
Characteristic Curves
(Tc=25°C)
ID-VDS Characteristics (typical)
RDS(ON)-ID Characteristics (typical)
150
VGS=10V
9V
12V
14
12
10V
8V
RDS(ON) (mΩ)
10
ID (A)
100
8
6
4
7V
2
0
50
0
10
20
30
40
50
ID (A)
6V
RDS(ON)-Tc Characteristics (typical)
VGS=5
V
ID=25A
VGS=10V
0
25
0
2
4
6
8
10
VDS (V)
RDS(ON) (mΩ)
20
ID-VGS Characteristics (typical)
15
10
5
VDS=10V
50
0
-75
-50
-25
0
25
50
Tc (℃)
75
100
125
150
40
VDS-VGS Characteristics (typical)
30
ID (A)
1.5
Tc=125℃
20
1
10
VDS (V)
25℃
-55℃
0.5
ID=50A
ID=25A
0
0
2
4
6
VGS (V)
8
10
0
1
10
VGS (V)
100
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50V N-ch MOSFET
EKV550
January. 2006
Characteristic Curves
(Tc=25°C)
Re(yfs)-ID Characteristics (typical)
VDS=10V
100
Capacitance-VDS Characteristics (typical)
VDS=10V
Tc=-55℃
10000
25℃
125℃
VGS=0V
f=1MHz
1
Ciss
0.1
0.1
1
10
ID (A)
100
Capacitance (pF)
Re(yfs) (S)
10
1000
Coss
IDR-VSD Characteristics (typical)
Crss
50
100
VGS=10V
0
40
10
20
30
40
50
VDS (V)
30
IDR (A)
SAFE OPERATING AREA
1000
20
VGS=5V
VGS=0V
ID(pulse)　MAX.
10
100
PW=1ms
PW=10ms
0
0.2
0.4
0.6
VSD (V)
0.8
1
1.2
ID　(A)
0
10
RDS(on)　LIMITED
PD-Ta Characteristics
90
無限大放熱板付
80
Tc=25℃
1shot
1
70
ＰＤ (W)
60
50
0.1
0.1
1
10
100
VDS　(V)
40
30
20
10
放熱板無し
0
0
50
100
150
Ta (℃)
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50V N-ch MOSFET
EKV550
January. 2006
Fig.1 Unclamped Inductive Test Method
EAS=
L
1
V(BR)DSS
·L·ILP2·
2
V(BR)DSS − VDD
V(BR)DSS
IL
VDS
ILp
RG
VDS
VDD
VGS
IL
VDD
0V
(a) Test Circuit
Fig.2
(b) Waveforms
Switching Time Test Method
RL
VDD≈25V
ID=25A
RL=1Ω
VGS=10V
RG=5Ω
ID
VDS
RG
VDD
VGS
0V
P.W.=10μs
Duty cycle≦1%
(a) Test Circuit
90%
VGS
10%
90%
VDS
10%
td(on)
tr
td(off)
ton
tf
toff
(b) Waveforms
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50V N-ch MOSFET
EKV550
January. 2006
External Dimensions
TO-220
Mass: Approx. 2.1g
(1) Gate
(1)
(2)
(2) Drain (Back Side)
(3)
(3) Source
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50V N-ch MOSFET
EKV550
January. 2006
<Worldwide Contacts>
Asia Pacific
China
Sanken Electric Hong Kong Co., Ltd.
Suite 1026 Ocean Centre, Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: 852-2735-5262
Fax: 852-2735-5494
Sanken Electric (Shanghai) Co., Ltd.
Room3202, Maxdo Centre, Xingyi Road 8, Changning district, Shanghai, China
Tel: 86-21-5208-1177
Fax: 86-21-5208-1757
Taiwan Sanken Electric Co., Ltd.
Room 1801, 18th Floor, 88 Jung Shiau East Road, Sec. 2, Taipei 100, Taiwan R.O.C.
Tel: 886-2-2356-8161
Fax: 886-2-2356-8261
India
Saket Devices Pvt. Ltd.
Office No.13, First Floor, Bandal - Dhankude Plaza, Near PMT Depot, Paud Road, Kothrud, Pune - 411 038, India
Tel: 91-20-5621-2340
91-20-2528-5449
Fax: 91-20-2528-5459
Japan
Sanken Electric Co., Ltd. Overseas Sales Headquaters
Metropolitan Plaza Bldg. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan
Tel: 81-3-3986-6164
Fax: 81-3-3986-8637
Korea
Sanken Electric Korea Co., Ltd.
Mirae Asset Life Bldg. 6F, 168 Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea
Tel: 82-2-714-3700
Fax: 82-2-3272-2145
Singapore
Sanken Electric Singapore Pte. Ltd.
150 Beach Road, #14-03 The Gateway West, Singapore 189720
Tel: 65-6291-4755
Fax: 65-6297-1744
Europe
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50V N-ch MOSFET
EKV550
January. 2006
United Kingdom
Sanken Power Systems (UK) Limited
Pencoed Technology Park, Pencoed, Bridgend CF35 5HY. UK
Tel: 44-1656-869-100
Fax: 44-1656-869-162
North America
United States
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Worcester, Massachusetts 01606, U.S.A.
Tel: 1-508-853-5000
Fax: 1-508-853-3353
Allegro MicroSystems, Inc. (Southern California)
14 Hughes Street, Suite B105, Irvine, CA 92618
Tel: 1-949-460-2003
Fax: 1-949-460-7837
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50V N-ch MOSFET
EKV550
January. 2006
CAUTION / WARNING
●The information in this publication has been carefully checked and is believed to be accurate; however, no
responsibility is assumed for inaccuracies.
● Sanken reserves the right to make changes without further notice to any products herein in the interest of
improvements in the performance, reliability, or manufacturability of its products.
Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify
that the information being relied upon is current.
● Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use
of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights,
intellectual property rights or any other rights of Sanken or any third party which may result from its use.
● When using the products herein, the applicability and suitability of such products for the intended purpose or object
shall be reviewed at the users’ responsibility.
● Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure nd defect
of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own
risk, preventative measures including safety design of the equipment or systems against any possible injury, death,
fires or damages to the society due to device failure or malfunction.
● Sanken products listed in this catalog are designed and intended for the use as components in general purpose
electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring
equipment, etc.). Before placing an order, the user’s written consent to the specifications is requested.
When considering the use of Sanken products in the applications where higher reliability is required (transportation
equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various
safety devices, etc.), please contact your nearest Sanken sales representative to discuss and obtain written confirmation
of your specifications. The use of Sanken products without the written consent of Sanken in the applications where
extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.)
is strictly prohibited.
● Anti radioactive ray design is not considered for the products listed herein.
● This publication shall not be reproduced in whole or in part without prior written approval from Sanken.
●This is notification that you, as purchaser of the products/technology, are not allowed to perform any of the following:
1. Resell or retransfer these products/technology to any party intending to disturb international peace and security.
2. Use these products/technology yourself for activities disturbing international peace and security.
3. Allow any other party to use these products/technology for activities disturbing international peace and security.
Also, as purchaser of these products/technology, you agree to follow the procedures for the export or transfer of these
products/technology, under the Foreign Exchange and Foreign Trade Law, when you export or transfer the
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