SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS 2N5605 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N5607/5609 Open emitter -100 2N5611 -120 2N5605 -60 2N5607/5609 Emitter-base voltage UNIT -80 Open base -80 V V -100 2N5611 VEBO VALUE Open collector -5 V -5 A 25 W IC Collector current PD Total power dissipation Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.37 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5605 VCEO(SUS) Collector-emitter sustaining voltage 2N5607/5609 TYP. MAX UNIT -60 IC=50mA ;IB=0 V -80 -100 2N5611 VCEsat MIN Collector-emitter saturation voltage IC=-1A; IB=-0.1A -0.5 V VBE Base-emitter on voltage IC=-2.5A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=Rated VCBO; IE=0 -0.1 mA ICEO Collector cut-off current VCE= Rated VCEO,IB=0 -1.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA 2N5605/5609 hFE 200 30 90 IC=-2.5A ; VCE=-5V DC current gain 2N5607/5611 2N5605/5609 fT 70 Transition frequency 70 IC=-0.5A ; VCE=-10V 2N5607/5611 MHz 60 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 PACKAGE OUTLINE Fig.2 outline dimensions 3