SAVANTIC 2N5611

SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N5605 2N5607 2N5609 2N5611
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For general-purpose amplifier ;
and switching applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
2N5605
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2N5607/5609
Open emitter
-100
2N5611
-120
2N5605
-60
2N5607/5609
Emitter-base voltage
UNIT
-80
Open base
-80
V
V
-100
2N5611
VEBO
VALUE
Open collector
-5
V
-5
A
25
W
IC
Collector current
PD
Total power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
VALUE
4.37
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N5605 2N5607 2N5609 2N5611
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N5605
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5607/5609
TYP.
MAX
UNIT
-60
IC=50mA ;IB=0
V
-80
-100
2N5611
VCEsat
MIN
Collector-emitter saturation voltage
IC=-1A; IB=-0.1A
-0.5
V
VBE
Base-emitter on voltage
IC=-2.5A ; VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=Rated VCBO; IE=0
-0.1
mA
ICEO
Collector cut-off current
VCE= Rated VCEO,IB=0
-1.0
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
2N5605/5609
hFE
200
30
90
IC=-2.5A ; VCE=-5V
DC current gain
2N5607/5611
2N5605/5609
fT
70
Transition frequency
70
IC=-0.5A ; VCE=-10V
2N5607/5611
MHz
60
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2N5605 2N5607 2N5609 2N5611
PACKAGE OUTLINE
Fig.2 outline dimensions
3