SavantIC Semiconductor Product Specification 2N3235 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·Designed for general–purpose switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 65 V VCEO Collector-emitter voltage Open base 55 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A IB Base current 7 A PC Collector power dissipation 115 W Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.52 UNIT /W SavantIC Semiconductor Product Specification 2N3235 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 VCE(sat)-1 Collector-emitter saturation voltage IC=4A ;IB=0.4A 1.1 V VCE(sat)-2 Collector-emitter saturation voltage IC=10A ;IB=3.3A 3.0 V VBE(on) Base-emitter on voltage IC=5A ; VCE=5V 1.5 V ICEO Collector cut-off current VCE=30V; IB=0 0.7 mA ICBO Collector cut-off current VCB=65V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE-1 DC current gain IC=5A ; VCE=5V 20 hFE-2 DC current gain IC=10A ; VCE=5V 5 2 55 UNIT V 70 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2N3235