SavantIC Semiconductor Product Specification 2N4913 2N4914 2N4915 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2N4904/4905/4906 ·Low collector saturation voltage APPLICATIONS ·For general–purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS 2N4913 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N4914 Open emitter 60 2N4915 80 2N4913 40 2N4914 Emitter-base voltage UNIT 40 Open base 2N4915 VEBO VALUE 60 V V 80 Open collector 5 V IC Collector current 5 A IB Base current 1 A PD Total power dissipation 87.5 W Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.0 UNIT /W SavantIC Semiconductor Product Specification 2N4913 2N4914 2N4915 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N4913 VCEO(SUS) Collector-emitter sustaining voltage 2N4914 MIN TYP. MAX UNIT 40 IC=0.2A ;IB=0 2N4915 V 60 80 VCEsat-1 Collector-emitter saturation voltage IC=2.5A; IB=0.25A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=5A ;IB=1A 1.5 V VBE Base-emitter on voltage IC=2.5A ; VCE=2V 1.4 V ICEO Collector cut-off current VCE=Rated VCEO; IB=0 1.0 mA ICBO Collector cut-off current VCB=Rated VCBO; IE=0 1.0 mA ICEV Collector cut-off current VCE= Rated VCEO; VBE(off)=1.5V TC=150 1.0 2.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=2.5A ; VCE=2V 25 hFE-2 DC current gain IC=5A ; VCE=2V 7 Transition frequency IC=1A ; VCE=10V;f=1.0MHz 4 fT 2 100 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N4913 2N4914 2N4915 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3