SavantIC Semiconductor Product Specification 2N6262 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 170 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V 10 A 150 W IC Collector current PD Total Power Dissipation Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W SavantIC Semiconductor Product Specification 2N6262 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 VCEsat Collector-emitter saturation voltge IC=5A ;IB=0.5A 2.0 V VBEsat Base-emitter saturation voltage IC=10A ;IB=2A 3.5 V VBE Base-emitter on voltage IC=3A ; VCE=2V 1.8 V ICEO Collector cut-off current VCE=100V; IB=0 1.0 mA ICEV Collector cut-off current VCE=150V; VBE(off)=1.5V TC=150 0.1 5.0 mA ICBO Emitter cut-off current VCB=150V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=3A ; VCE=2V 20 Transition frequency IC=1A;VCE=10V 0.8 fT CONDITIONS 2 MIN TYP. MAX 150 UNIT V 70 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3 2N6262