Inchange Semiconductor Product Specification 2N6257 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・Designed for audio amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector-emitter voltage Open base 40 V VEBO Emitter-base voltage Open collector 5 V 20 A 150 W IC Collector current PD Total Power Dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 0.875 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6257 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 VCEsat-1 Collector-emitter saturation voltge IC=8A ;IB=0.8A 1.5 V VCEsat-2 Collector-emitter saturation voltge IC=20A ;IB=4A 4.0 V ICEO Collector cut-off current VCE=40V; IB=0 1.0 mA ICEV Collector cut-off current VCE=50V; VBE(off)=1.5V TC=150℃ 0.1 5.0 mA ICBO Collector cut-off current VCB=50V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=8A ; VCE=4V 15 hFE-2 DC current gain IC=20A ; VCE=4V 5 Transition frequency IC=1A;VCE=10V 0.8 fT CONDITIONS 2 MIN TYP. MAX 40 UNIT V 75 MHz Inchange Semiconductor Product Specification 2N6257 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3