SAVANTIC 2N6420

SavantIC Semiconductor
Product Specification
2N6420
Silicon PNP Power Transistors
DESCRIPTION
·With TO-66 package
·Continuous collector current-IC=-1A
·Power dissipation -PD=35W @TC=25
·Complement to type 2N3583
APPLICATIONS
·High speed switching and linear amplifier
·High-voltage operational amplifiers
·Switching regulators ,converters
·Deflection stages and high fidelity amplifers
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-250
V
VCEO
Collector-emitter voltage
Open base
-175
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-1.0
A
ICM
Collector current-Peak
-5.0
A
IB
Base current
-1.0
A
PT
Total power dissipation
35
W
Tj
Junction temperature
200
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
MAX
5.0
UNIT
/W
SavantIC Semiconductor
Product Specification
2N6420
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-50mA ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-1A; IB=-0.125A
-5.0
V
VBE
Base -emitter on voltage
IC=-1A ; VCE=-10V
-1.4
V
ICEX
Collector cut-off current
VCE=-225V;VBE(off)=-1.5V
TC=150
-1.0
-3.0
mA
ICEO
Collector cut-off current
VCE=-150V ;IB=0
-10
mA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-5.0
mA
hFE-1
DC current gain
IC=-0.1A ; VCE=-10V
40
hFE-2
DC current gain
IC=-0.5A ; VCE=-10V
40
hFE-3
DC current gain
IC=-1A ; VCE=-10V
10
2
MIN
TYP.
MAX
-175
UNIT
V
200
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2N6420