SAVANTIC 2SC1504

SavantIC Semiconductor
Product Specification
2SC1504
Silicon NPN Power Transistors
DESCRIPTION
With TO-66 package
·Continuous collector current-IC=2A
·Power dissipation -PD=40W @TC=25
·
APPLICATIONS
·High speed switching and linear amplification
·Switching regulators ,converters
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
400
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
2
A
ICM
Collector current-Peak
5
A
IB
Base current
1
A
PT
Total power dissipation
40
W
Tj
Junction temperature
200
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
MAX
5.0
UNIT
/W
SavantIC Semiconductor
Product Specification
2SC1504
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ; IB=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=1A; IB=0.1A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=1A ;IB=0.1A
1.5
V
ICBO
Collector cut-off current
VCB=400V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
mA
hFE
DC current gain
IC=1A ; VCE=4V
Transition frequency
IC=0.1A ; VCE=10V
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
20
10
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SC1504