SavantIC Semiconductor Product Specification 2N5734 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High current capability · APPLICATIONS ·For linear amplifier and inductive switching applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 30 A ICM Collector current-peak 30 A PT Total power dissipation 150 W Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX UNIT 1.17 /W SavantIC Semiconductor Product Specification 2N5734 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=15 A;IB=1.5 A 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=30 A;IB=6 A 4.0 V VBE Base-emitter on voltage IC=15A ; VCE=2V 2.7 V ICBO Collector cut-off current VCB=100V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE-1 DC current gain IC=10A ; VCE=2V 30 hFE-2 DC current gain IC=20A ; VCE=4V 5 Transition frequency IC=1A ; VCE=10V 30 fT CONDITIONS 2 MIN TYP. MAX 80 UNIT V 300 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2N5734