SavantIC Semiconductor Product Specification 2SB1289 Silicon PNP Power Transistors DESCRIPTION With TO-220C package ·Complement to type 2SD1580 ·Low collector saturation voltage ·Wide area of safe operation · APPLICATIONS ·For use in low frequency power amplifier applications,power drivers and DC-DC converters PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -7 A ICM Collector current-peak -10 A PC Collector power dissipation Ta=25 2 TC=25 40 W Tj Junction temperature 150 Tstg Storage temperature -50~150 SavantIC Semiconductor Product Specification 2SB1289 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0 -80 V V(BR)CBO Collector-base breakdown voltage IC=-50µA; IE=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-50µA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A -1.0 V VBEsat Base-emitter saturation voltage IC=-4A; IB=-0.4A -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-4V; IC=0 -10 µA hFE DC current gain IC=-1A ; VCE=-5V COB Output capacitance IE=0 ; VCB=-10V; f=1MHz 200 pF fT Transition frequency IC=-0.5A ; VCE=-5V 12 MHz hFE Classifications E F 100-200 160-320 2 MIN TYP. 100 MAX UNIT 320 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 2SB1289