SAVANTIC 2SB1345

SavantIC Semiconductor
Product Specification
2SB1345
Silicon PNP Power Transistors
DESCRIPTION
·With TO-247 package
·Complement to type 2SD2062
·Low collector saturation voltage
APPLICATIONS
·For power drvier and general purpose
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-247) and
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-5
V
-7
A
80
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SB1345
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA; IB=0
-80
V
V(BR)CBO
Collector-base breakdown voltage
IC=-50µA; IE=0
-100
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-50µA; IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-5A ;IB=-0.5A
-2.0
V
VBEsat
Base-emitter saturation voltage
IC=-5A ;IB=-0.5A
-2.5
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-10
µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
µA
hFE
DC current gain
IC=-1A ; VCE=-5V
Transition frequency
IC=-0.5A ; VCE=-10V
fT
CONDITIONS
hFE Classifications
D
E
F
60-120
100-200
160-320
2
MIN
TYP.
60
MAX
UNIT
320
12
MHz
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SB1345