Inchange Semiconductor Product Specification 2SB1345 Silicon PNP Power Transistors · DESCRIPTION ·With TO-247 package ·Complement to type 2SD2062 ·Low collector saturation voltage APPLICATIONS ·For power drvier and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-247) and Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V -7 A 80 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB1345 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -80 V V(BR)CBO Collector-base breakdown voltage IC=-50μA; IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-50μA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V VBEsat Base-emitter saturation voltage IC=-5A ;IB=-0.5A -2.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE DC current gain IC=-1A ; VCE=-5V Transition frequency IC=-0.5A ; VCE=-10V fT CONDITIONS E F 60-120 100-200 160-320 TYP. B B hFE Classifications D MIN 2 60 MAX UNIT 320 12 MHz Inchange Semiconductor Product Specification 2SB1345 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3