SAVANTIC 2SB994

SavantIC Semiconductor
Product Specification
2SB994
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
APPLICATIONS
·Audio and general purpose
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-7
V
-3
A
30
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SB994
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ,IB=0
-60
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ,IE=0
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ,IC=0
-7
V
VCEsat
Collector-emitter saturation voltage
IC=-2A; IB=-0.2A
-0.6
V
VBEsat
Base-emitter saturation voltage
IC=-2A; IB=-0.2A
-1.2
V
ICBO
Collector cut-off current
VCB=-60V; IE=0
-100
µA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-100
µA
hFE
DC current gain
IC=-0.5A ; VCE=-5V
60
Transition frequency
IE=0.5A ; VCE=-10V
9
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
200
MHz
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
2SB994