SAVANTIC 2SB691

SavantIC Semiconductor
Product Specification
2SB691
Silicon PNP Power Transistors
DESCRIPTION
With TO-3PN package
·Wide area of safe operation
·
APPLICATIONS
·For low frequency power amplifier and
power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-130
V
VCEO
Collector-emitter voltage
Open base
-80
V
VEBO
Emitter-base voltage
Open collector
-5
V
-5
A
60
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SB691
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-30mA ;IB=0
-80
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ;IE=0
-130
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
-5
V
Collector-emitter saturation voltage
IC=-3A; IB=-0.3A
-1.5
V
VBE
Base-emitter on voltage
IC=-1A;VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=-130V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
40
hFE-2
DC current gain
IC=-3A ; VCE=-5V
20
Transition frequency
IC=-1A ; VCE=-5V
VCEsat
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
200
7
MHz
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2SB691