SavantIC Semiconductor Product Specification BUV70 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1300 V VCEO Collector-emitter voltage Open base 550 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A IB Base current 4 A PC Collector power dissipation 140 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification BUV70 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;IB=0 550 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A 2.0 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.2A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE DC current gain IC=3.2A ; VCE=2V Transition frequency IC=0.5A ; VCE=10V fT CONDITIONS 2 MIN TYP. MAX UNIT 5 9 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 BUV70