SavantIC Semiconductor Product Specification 2SB1362 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Wide area of safe operation ·Complement to type 2SD2053 APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -9 A ICM Collector current -peak -15 A PC Collector power dissipation 100 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB1362 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-7A; IB=-0.7A -2.0 V VBE Base-emitter on voltage IC=-7A;VCE=-5V -1.8 V ICBO Collector cut-off current VCB=-150V; IE=0 -50 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 µA hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE-2 DC current gain IC=-1A ; VCE=-5V 60 hFE-3 DC current gain IC=-7A ; VCE=-5V 15 Transition frequency IC=-0.5A ; VCE=-5V 15 MHz Collector output capacitance f=1MHz;VCB=-10V 270 pF fT COB CONDITIONS hFE-2 Classifications Q P 60-120 100-200 2 MIN TYP. MAX -150 UNIT V 200 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SB1362