SavantIC Semiconductor Product Specification 2SD2340 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·DARLINGTON ·High DC current gain APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 130 V VCEO Collector-emitter voltage Open base 110 V VEBO Emitter-base voltage Open collector 5 V 6 A IC PC Collector current TC=25 50 Ta=25 2.5 Collector power dissipation W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD2340 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=5A ;IB=5mA 2.5 V VBEsat Base-emitter saturation voltage IC=5A ;IB=5mA 3.0 V ICBO Collector cut-off current VCB=130V; IE=0 100 µA ICEO Collector cut-off current VCE=110V IB=0 100 µA IEBO Emitter cut-off current VEB=5V; IC=0 100 µA hFE DC current gain IC=3A ; VCE=5V Transition frequency IC=0.5A ; VCE=10V fT CONDITIONS 2 MIN TYP. MAX 110 UNIT V 5000 20 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SD2340