SAVANTIC 2SD2340

SavantIC Semiconductor
Product Specification
2SD2340
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·DARLINGTON
·High DC current gain
APPLICATIONS
·Audio ,regulator and general purpose
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
130
V
VCEO
Collector-emitter voltage
Open base
110
V
VEBO
Emitter-base voltage
Open collector
5
V
6
A
IC
PC
Collector current
TC=25
50
Ta=25
2.5
Collector power dissipation
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD2340
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=30mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=5mA
2.5
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=5mA
3.0
V
ICBO
Collector cut-off current
VCB=130V; IE=0
100
µA
ICEO
Collector cut-off current
VCE=110V IB=0
100
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
100
µA
hFE
DC current gain
IC=3A ; VCE=5V
Transition frequency
IC=0.5A ; VCE=10V
fT
CONDITIONS
2
MIN
TYP.
MAX
110
UNIT
V
5000
20
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SD2340