SavantIC Semiconductor Product Specification 2SC1046 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For CRT horizontal output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=? ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 6 V 3 A 25 W IC Collector current PC Collector power dissipation Tj Junction temperature 125 ? Tstg Storage temperature -40~125 ? TC=25? SavantIC Semiconductor Product Specification 2SC1046 Silicon NPN Power Transistors CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=5mA; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 1000 V V(BR)EBO Emitter-base breakdown votage IE=1mA; IC=0 6 V Collector-emitter saturation voltage IC=2 A;IB=0.4A 2.0 V ICBO Collector cut-off current VCB=800V;IE=0 10 µA IEBO Emitter cut-off current VEB=5V;IC=0 10 µA hFE DC current gain IC=2 A ; VCE=5V VCEsat CONDITIONS 2 MIN 4 TYP. MAX 20 UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC1046